Abstract
Anodization of p-type silicon were carried out and porous p-type silicon omnidirectional mirror (OM) based on one dimensional photonic crystal were materialized. This OM demonstrates a photonic band gap (PBG) as wide as 0.25 μm, while its midgap wavelength is about 1.6 μm, which is very near to the most important band centered at 1.5 μm for communication industry.
| Original language | English |
|---|---|
| Pages (from-to) | 59-62 |
| Number of pages | 4 |
| Journal | Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices |
| Volume | 12 |
| Issue number | 1 |
| State | Published - Feb 2006 |
Keywords
- Anodization
- OM
- Photonic crystal
- Porous silicon