MEXTRAM model based SiGe HBT large-signal modeling

Han Bo; Li Shoulin; Cheng Jiali; Yin Qiuyan; Gao Jianjun

doi:10.1088/1674-4926/31/10/104004

MEXTRAM model based SiGe HBT large-signal modeling

Han Bo, Li Shoulin, Cheng Jiali, Yin Qiuyan, Gao Jianjun

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

An improved large-signal equivalent-circuit model for SiGe HBTs based on the MEXTRAM model (level 504.5) is proposed. The proposed model takes into account the soft knee effect. The model keeps the main features of the MEXTRAM model even though some simplifications have been made in the equivalent circuit topology. This model is validated in DC and AC analyses for SiGe HBTs fabricated with 0.35-μm BiCMOS technology, 1 × 8 μm2 emitter area. Good agreement is achieved between the measured and modeled results for DC and S-parameters (from 50 MHz to 20 GHz), which shows that the proposed model is accurate and reliable. The model has been implemented in Verilog-A using the ADS circuit simulator.

Original language	English
Article number	104004
Journal	Journal of Semiconductors
Volume	31
Issue number	10
DOIs	https://doi.org/10.1088/1674-4926/31/10/104004
State	Published - Oct 2010

Keywords

Heterojunction bipolar transistor
Large-signal model
MEXTRAM model
Soft knee effect
Verilog-A

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10.1088/1674-4926/31/10/104004

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title = "MEXTRAM model based SiGe HBT large-signal modeling",

abstract = "An improved large-signal equivalent-circuit model for SiGe HBTs based on the MEXTRAM model (level 504.5) is proposed. The proposed model takes into account the soft knee effect. The model keeps the main features of the MEXTRAM model even though some simplifications have been made in the equivalent circuit topology. This model is validated in DC and AC analyses for SiGe HBTs fabricated with 0.35-μm BiCMOS technology, 1 × 8 μm2 emitter area. Good agreement is achieved between the measured and modeled results for DC and S-parameters (from 50 MHz to 20 GHz), which shows that the proposed model is accurate and reliable. The model has been implemented in Verilog-A using the ADS circuit simulator.",

keywords = "Heterojunction bipolar transistor, Large-signal model, MEXTRAM model, Soft knee effect, Verilog-A",

author = "Han Bo and Li Shoulin and Cheng Jiali and Yin Qiuyan and Gao Jianjun",

year = "2010",

month = oct,

doi = "10.1088/1674-4926/31/10/104004",

language = "英语",

volume = "31",

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TY - JOUR

T1 - MEXTRAM model based SiGe HBT large-signal modeling

AU - Bo, Han

AU - Shoulin, Li

AU - Jiali, Cheng

AU - Qiuyan, Yin

AU - Jianjun, Gao

PY - 2010/10

Y1 - 2010/10

N2 - An improved large-signal equivalent-circuit model for SiGe HBTs based on the MEXTRAM model (level 504.5) is proposed. The proposed model takes into account the soft knee effect. The model keeps the main features of the MEXTRAM model even though some simplifications have been made in the equivalent circuit topology. This model is validated in DC and AC analyses for SiGe HBTs fabricated with 0.35-μm BiCMOS technology, 1 × 8 μm2 emitter area. Good agreement is achieved between the measured and modeled results for DC and S-parameters (from 50 MHz to 20 GHz), which shows that the proposed model is accurate and reliable. The model has been implemented in Verilog-A using the ADS circuit simulator.

AB - An improved large-signal equivalent-circuit model for SiGe HBTs based on the MEXTRAM model (level 504.5) is proposed. The proposed model takes into account the soft knee effect. The model keeps the main features of the MEXTRAM model even though some simplifications have been made in the equivalent circuit topology. This model is validated in DC and AC analyses for SiGe HBTs fabricated with 0.35-μm BiCMOS technology, 1 × 8 μm2 emitter area. Good agreement is achieved between the measured and modeled results for DC and S-parameters (from 50 MHz to 20 GHz), which shows that the proposed model is accurate and reliable. The model has been implemented in Verilog-A using the ADS circuit simulator.

KW - Heterojunction bipolar transistor

KW - Large-signal model

KW - MEXTRAM model

KW - Soft knee effect

KW - Verilog-A

UR - https://www.scopus.com/pages/publications/78649407783

U2 - 10.1088/1674-4926/31/10/104004

DO - 10.1088/1674-4926/31/10/104004

M3 - 文章

AN - SCOPUS:78649407783

SN - 1674-4926

VL - 31

JO - Journal of Semiconductors

JF - Journal of Semiconductors

IS - 10

M1 - 104004

ER -

MEXTRAM model based SiGe HBT large-signal modeling

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