TY - GEN
T1 - Metal Migration Induced Breakdown from Gate Contact in Bulk FinFET Devices
AU - Yang, Xin
AU - Qing, Yihong
AU - Chang-Liao, Kuei Shu
AU - Qiao, Yuchong
AU - Wang, Chaolun
AU - Liu, Zhiwei
AU - Li, Luoyong
AU - Tsai, Chihang
AU - Wu, Yongren
AU - Xie, Yazhen
AU - Yu, Weisong
AU - Wu, Xing
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - Bulk fin field-effect transistor (FinFET) devices with excellent gate control ability are promising to succeed the planar devices under Moore's law. With the scaling down of the feature size, the reliability of the FinFET device becomes an urgent issue. Also, the miniaturized three-dimensional structure of bulk FinFET makes the failure characterization more challenging. In this paper, we carried out the direct current (DC) breakdown and transmission line pulse (TLP) breakdown in the bulk FinFET. Corresponding microstructural and chemical elements' differences between gate contact and gate electrode are characterized by transmission electron microscopy (TEM). For both experiments, the fin nearest to gate contact is completely damaged under electrical stressing. The destruction of DC is more serious, which has a large area fusion with metal migration. The TLP damage is local and tends to form a void. The gate contact structure is intact with slight elements' migration. This work paves a guideline for the reliability improvements of FinFET.
AB - Bulk fin field-effect transistor (FinFET) devices with excellent gate control ability are promising to succeed the planar devices under Moore's law. With the scaling down of the feature size, the reliability of the FinFET device becomes an urgent issue. Also, the miniaturized three-dimensional structure of bulk FinFET makes the failure characterization more challenging. In this paper, we carried out the direct current (DC) breakdown and transmission line pulse (TLP) breakdown in the bulk FinFET. Corresponding microstructural and chemical elements' differences between gate contact and gate electrode are characterized by transmission electron microscopy (TEM). For both experiments, the fin nearest to gate contact is completely damaged under electrical stressing. The destruction of DC is more serious, which has a large area fusion with metal migration. The TLP damage is local and tends to form a void. The gate contact structure is intact with slight elements' migration. This work paves a guideline for the reliability improvements of FinFET.
KW - device reliability
KW - direct current breakdown
KW - fin field-effect transistors
KW - transmission electron microscopy
KW - transmission line pulse
UR - https://www.scopus.com/pages/publications/85122946425
U2 - 10.1109/IPFA53173.2021.9617380
DO - 10.1109/IPFA53173.2021.9617380
M3 - 会议稿件
AN - SCOPUS:85122946425
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
BT - 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021
Y2 - 15 September 2021 through 15 October 2021
ER -