Metal-induced solid-phase crystallization of amorphous TiO 2 thin films

Chang Yang; Yasushi Hirose; Shoichiro Nakao; Ngoc Lam Huong Hoang; Tetsuya Hasegawa

doi:10.1063/1.4739934

Metal-induced solid-phase crystallization of amorphous TiO ₂ thin films

Chang Yang^*
, Yasushi Hirose
, Shoichiro Nakao
, Ngoc Lam Huong Hoang
, Tetsuya Hasegawa

^*Corresponding author for this work

The University of Tokyo
Kanagawa Institute of Industrial Science and Technology
Japan Science and Technology Agency

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Metal-induced solid-phase crystallization of amorphous TiO ₂ thin films was investigated by introducing metal contact layers such as Ni or Cu between the TiO ₂ film and substrate. The crystallization temperature of TiO ₂ was found to be lowered by 30 °C (from ∼250 to ∼220 °C) with the use of a Ni contact layer. Based on the fact that part of the Ni atoms diffused to the surface of the crystallized TiO ₂ film, we proposed a reaction-assisted crystallization model in which an intermediate complex containing Ti-O and Ni-O bonds decomposes to crystallize TiO ₂ at a relatively low temperature.

Original language	English
Article number	052101
Journal	Applied Physics Letters
Volume	101
Issue number	5
DOIs	https://doi.org/10.1063/1.4739934
State	Published - 30 Jul 2012
Externally published	Yes

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title = "Metal-induced solid-phase crystallization of amorphous TiO 2 thin films",

abstract = "Metal-induced solid-phase crystallization of amorphous TiO 2 thin films was investigated by introducing metal contact layers such as Ni or Cu between the TiO 2 film and substrate. The crystallization temperature of TiO 2 was found to be lowered by 30 °C (from ∼250 to ∼220 °C) with the use of a Ni contact layer. Based on the fact that part of the Ni atoms diffused to the surface of the crystallized TiO 2 film, we proposed a reaction-assisted crystallization model in which an intermediate complex containing Ti-O and Ni-O bonds decomposes to crystallize TiO 2 at a relatively low temperature.",

author = "Chang Yang and Yasushi Hirose and Shoichiro Nakao and Hoang, \{Ngoc Lam Huong\} and Tetsuya Hasegawa",

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T1 - Metal-induced solid-phase crystallization of amorphous TiO 2 thin films

AU - Yang, Chang

AU - Hirose, Yasushi

AU - Nakao, Shoichiro

AU - Hoang, Ngoc Lam Huong

AU - Hasegawa, Tetsuya

PY - 2012/7/30

Y1 - 2012/7/30

N2 - Metal-induced solid-phase crystallization of amorphous TiO 2 thin films was investigated by introducing metal contact layers such as Ni or Cu between the TiO 2 film and substrate. The crystallization temperature of TiO 2 was found to be lowered by 30 °C (from ∼250 to ∼220 °C) with the use of a Ni contact layer. Based on the fact that part of the Ni atoms diffused to the surface of the crystallized TiO 2 film, we proposed a reaction-assisted crystallization model in which an intermediate complex containing Ti-O and Ni-O bonds decomposes to crystallize TiO 2 at a relatively low temperature.

AB - Metal-induced solid-phase crystallization of amorphous TiO 2 thin films was investigated by introducing metal contact layers such as Ni or Cu between the TiO 2 film and substrate. The crystallization temperature of TiO 2 was found to be lowered by 30 °C (from ∼250 to ∼220 °C) with the use of a Ni contact layer. Based on the fact that part of the Ni atoms diffused to the surface of the crystallized TiO 2 film, we proposed a reaction-assisted crystallization model in which an intermediate complex containing Ti-O and Ni-O bonds decomposes to crystallize TiO 2 at a relatively low temperature.

UR - https://www.scopus.com/pages/publications/84864657431

U2 - 10.1063/1.4739934

DO - 10.1063/1.4739934

M3 - 文章

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VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052101

ER -

Metal-induced solid-phase crystallization of amorphous TiO ₂ thin films

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