Memory properties of metal-ferroelectric-semiconductor structure

Z. Ma; X. Meng; J. Chu

doi:10.1080/00150190108008464

Memory properties of metal-ferroelectric-semiconductor structure

Z. Ma^*
, X. Meng
, J. Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Crack-free lead zirconic titanate (PZT) film was grown on p-Si substrate by sol-gel technique. The capacitance-voltage characteristics of Pt/PZT/p-Si structure were measured and their hysteresis loops were observed at different temperatures and frequencies. We consider that the conduction peak in Conductance-Voltage characteristic is due to formation of reverse layer, rather than the leakage current from semiconductor to ferroelectrics.

Original language	English
Pages (from-to)	239-245
Number of pages	7
Journal	Ferroelectrics
Volume	253
Issue number	1-4
DOIs	https://doi.org/10.1080/00150190108008464
State	Published - 2001
Externally published	Yes
Event	6th International Symposium on Ferroic Domains and Mesoscopic Structures (ISFD-6) - Nanjing, China Duration: 29 May 2000 → 2 Jun 2000

Keywords

C-V characteristic
Ferroelectric

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10.1080/00150190108008464

Cite this

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title = "Memory properties of metal-ferroelectric-semiconductor structure",

abstract = "Crack-free lead zirconic titanate (PZT) film was grown on p-Si substrate by sol-gel technique. The capacitance-voltage characteristics of Pt/PZT/p-Si structure were measured and their hysteresis loops were observed at different temperatures and frequencies. We consider that the conduction peak in Conductance-Voltage characteristic is due to formation of reverse layer, rather than the leakage current from semiconductor to ferroelectrics.",

keywords = "C-V characteristic, Ferroelectric",

author = "Z. Ma and X. Meng and J. Chu",

year = "2001",

doi = "10.1080/00150190108008464",

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volume = "253",

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journal = "Ferroelectrics",

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note = "6th International Symposium on Ferroic Domains and Mesoscopic Structures (ISFD-6) ; Conference date: 29-05-2000 Through 02-06-2000",

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TY - JOUR

T1 - Memory properties of metal-ferroelectric-semiconductor structure

AU - Ma, Z.

AU - Meng, X.

AU - Chu, J.

PY - 2001

Y1 - 2001

N2 - Crack-free lead zirconic titanate (PZT) film was grown on p-Si substrate by sol-gel technique. The capacitance-voltage characteristics of Pt/PZT/p-Si structure were measured and their hysteresis loops were observed at different temperatures and frequencies. We consider that the conduction peak in Conductance-Voltage characteristic is due to formation of reverse layer, rather than the leakage current from semiconductor to ferroelectrics.

AB - Crack-free lead zirconic titanate (PZT) film was grown on p-Si substrate by sol-gel technique. The capacitance-voltage characteristics of Pt/PZT/p-Si structure were measured and their hysteresis loops were observed at different temperatures and frequencies. We consider that the conduction peak in Conductance-Voltage characteristic is due to formation of reverse layer, rather than the leakage current from semiconductor to ferroelectrics.

KW - C-V characteristic

KW - Ferroelectric

UR - https://www.scopus.com/pages/publications/0034875393

U2 - 10.1080/00150190108008464

DO - 10.1080/00150190108008464

M3 - 会议文章

AN - SCOPUS:0034875393

SN - 0015-0193

VL - 253

SP - 239

EP - 245

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1-4

T2 - 6th International Symposium on Ferroic Domains and Mesoscopic Structures (ISFD-6)

Y2 - 29 May 2000 through 2 June 2000

ER -

Memory properties of metal-ferroelectric-semiconductor structure

Abstract

Keywords

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