Mechanisms of Graphene Chemical Vapor Deposition (CVD) Growth

  • Xiuyun Zhang*
  • , Qinghong Yuan
  • , Haibo Shu
  • , Feng Ding
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

5 Scopus citations

Abstract

Graphene chemical vapor deposition (CVD) growth is the most studied method for graphene synthesis. It has the advantages of synthesizing very large area graphene, easy to controlling the number of layers and easy for transfer from the catalyst surface to the desired substrates. But the quality of graphene CVD samples is still not as good as those made by the mechanical peeling method. So, improving the quality of CVD synthesized graphene is the primary objective of study. To achieve this requires careful experimental design with the guidance of detailed and insightful mechanism of growth. Although a great number of experimental and theoretical efforts have been dedicated to the understanding of graphene CVD growth, our knowledge is far from sufficient to guide the experimental design. So, here we plan to briefly present the recent status of graphene CVD growth, especially the theoretical understanding on the mechanism in this chapter.

Original languageEnglish
Title of host publicationGraphene Chemistry
Subtitle of host publicationTheoretical Perspectives
Publisherwiley
Pages255-290
Number of pages36
ISBN (Electronic)9781118691281
ISBN (Print)9781119942122
DOIs
StatePublished - 9 Aug 2013
Externally publishedYes

Keywords

  • Chemical vapor deposition
  • Density functional theory
  • Graphene
  • Kinetics
  • Nucleation and growth
  • Two dimensional crystals

Fingerprint

Dive into the research topics of 'Mechanisms of Graphene Chemical Vapor Deposition (CVD) Growth'. Together they form a unique fingerprint.

Cite this