Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator

Ni Zhong; Hisashi Shima; Hiro Akinaga

doi:10.1063/1.3646525

Mechanism of the performance improvement of TiO_2-x-based field-effect transistor using SiO₂ as gate insulator

Ni Zhong, Hisashi Shima, Hiro Akinaga

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32 Scopus citations

Abstract

RF magnetron sputtered titanium oxide (TiO_2-x) thin films were used as active channel layer to fabricate field-effect transistors (FETs). In the as-prepared FETs, poor FET performance was found, with a low on-to-off current ratio of ∼500 and a high sub-threshold slope. It is attributed the existence of Si-O-Ti cross-linking bonding at TiO_2-x/SiO₂ interface, which was probed by X-ray Photoelectron Spectroscopy (XPS) measurement. A remark improvement of sub-threshold slope and on-to-off current ratio was observed due to post annealing in vacuum at 300 °C for 30min. By using the electron energy loss spectroscope (EELS) analysis, oxidization of TiO_2-x layer closing to SiO₂ layer region was found, suggesting that Si-O-Ti cross-linking bonding at TiO_2-x/SiO ₂ interface breaks due to post annealing treatment.

Original language	English
Article number	032167
Journal	AIP Advances
Volume	1
Issue number	3
DOIs	https://doi.org/10.1063/1.3646525
State	Published - Sep 2011
Externally published	Yes

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@article{23fe30c9de2e4008b58fc97bea622f72,

title = "Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator",

abstract = "RF magnetron sputtered titanium oxide (TiO2-x) thin films were used as active channel layer to fabricate field-effect transistors (FETs). In the as-prepared FETs, poor FET performance was found, with a low on-to-off current ratio of ∼500 and a high sub-threshold slope. It is attributed the existence of Si-O-Ti cross-linking bonding at TiO2-x/SiO2 interface, which was probed by X-ray Photoelectron Spectroscopy (XPS) measurement. A remark improvement of sub-threshold slope and on-to-off current ratio was observed due to post annealing in vacuum at 300 °C for 30min. By using the electron energy loss spectroscope (EELS) analysis, oxidization of TiO2-x layer closing to SiO2 layer region was found, suggesting that Si-O-Ti cross-linking bonding at TiO2-x/SiO 2 interface breaks due to post annealing treatment.",

author = "Ni Zhong and Hisashi Shima and Hiro Akinaga",

year = "2011",

month = sep,

doi = "10.1063/1.3646525",

language = "英语",

volume = "1",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator

AU - Zhong, Ni

AU - Shima, Hisashi

AU - Akinaga, Hiro

PY - 2011/9

Y1 - 2011/9

N2 - RF magnetron sputtered titanium oxide (TiO2-x) thin films were used as active channel layer to fabricate field-effect transistors (FETs). In the as-prepared FETs, poor FET performance was found, with a low on-to-off current ratio of ∼500 and a high sub-threshold slope. It is attributed the existence of Si-O-Ti cross-linking bonding at TiO2-x/SiO2 interface, which was probed by X-ray Photoelectron Spectroscopy (XPS) measurement. A remark improvement of sub-threshold slope and on-to-off current ratio was observed due to post annealing in vacuum at 300 °C for 30min. By using the electron energy loss spectroscope (EELS) analysis, oxidization of TiO2-x layer closing to SiO2 layer region was found, suggesting that Si-O-Ti cross-linking bonding at TiO2-x/SiO 2 interface breaks due to post annealing treatment.

AB - RF magnetron sputtered titanium oxide (TiO2-x) thin films were used as active channel layer to fabricate field-effect transistors (FETs). In the as-prepared FETs, poor FET performance was found, with a low on-to-off current ratio of ∼500 and a high sub-threshold slope. It is attributed the existence of Si-O-Ti cross-linking bonding at TiO2-x/SiO2 interface, which was probed by X-ray Photoelectron Spectroscopy (XPS) measurement. A remark improvement of sub-threshold slope and on-to-off current ratio was observed due to post annealing in vacuum at 300 °C for 30min. By using the electron energy loss spectroscope (EELS) analysis, oxidization of TiO2-x layer closing to SiO2 layer region was found, suggesting that Si-O-Ti cross-linking bonding at TiO2-x/SiO 2 interface breaks due to post annealing treatment.

UR - https://www.scopus.com/pages/publications/80053497301

U2 - 10.1063/1.3646525

DO - 10.1063/1.3646525

M3 - 文章

AN - SCOPUS:80053497301

SN - 2158-3226

VL - 1

JO - AIP Advances

JF - AIP Advances

IS - 3

M1 - 032167

ER -

Mechanism of the performance improvement of TiO_2-x-based field-effect transistor using SiO₂ as gate insulator

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