TY - JOUR
T1 - Mechanism of oxidation on Si2Sb2Te5 phase change material and its application
AU - Zhang, Ting
AU - Song, Zhitang
AU - Gu, Yifeng
AU - Cheng, Yan
AU - Liu, Bo
AU - Feng, Songlin
PY - 2011/2
Y1 - 2011/2
N2 - Uniformly oxygen doping into phase change materials (PCMs) will increase their crystallization temperatures, but natural oxidation of PCMs has an opposite effect. Mechanism of oxidation for Si2Sb2Te 5 was studied by in situ X-ray photoelectron spectroscopy, employing an oxygen content gradient sample. During an oxidation process, oxygen preferentially reacts with Si due to its smallest electronegativity value among Si, Sb, and Te elements. Models have been proposed for the different mechanisms of oxidation. O-doping into Si-Sb-Te was proposed to prepare nano-crystal PCM based on the discovering. Performance of nano-crystal material and memory device was effectively promoted.
AB - Uniformly oxygen doping into phase change materials (PCMs) will increase their crystallization temperatures, but natural oxidation of PCMs has an opposite effect. Mechanism of oxidation for Si2Sb2Te 5 was studied by in situ X-ray photoelectron spectroscopy, employing an oxygen content gradient sample. During an oxidation process, oxygen preferentially reacts with Si due to its smallest electronegativity value among Si, Sb, and Te elements. Models have been proposed for the different mechanisms of oxidation. O-doping into Si-Sb-Te was proposed to prepare nano-crystal PCM based on the discovering. Performance of nano-crystal material and memory device was effectively promoted.
UR - https://www.scopus.com/pages/publications/79951915541
U2 - 10.1143/JJAP.50.020202
DO - 10.1143/JJAP.50.020202
M3 - 文章
AN - SCOPUS:79951915541
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 2
M1 - 020202
ER -