Mechanism of oxidation on Si2Sb2Te5 phase change material and its application

Ting Zhang; Zhitang Song; Yifeng Gu; Yan Cheng; Bo Liu; Songlin Feng

doi:10.1143/JJAP.50.020202

Mechanism of oxidation on Si₂Sb₂Te₅ phase change material and its application

Ting Zhang^*
, Zhitang Song
, Yifeng Gu
, Yan Cheng
, Bo Liu
, Songlin Feng

^*Corresponding author for this work

CAS - Shanghai Institute of Microsystem and Information Technology

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Uniformly oxygen doping into phase change materials (PCMs) will increase their crystallization temperatures, but natural oxidation of PCMs has an opposite effect. Mechanism of oxidation for Si₂Sb₂Te ₅ was studied by in situ X-ray photoelectron spectroscopy, employing an oxygen content gradient sample. During an oxidation process, oxygen preferentially reacts with Si due to its smallest electronegativity value among Si, Sb, and Te elements. Models have been proposed for the different mechanisms of oxidation. O-doping into Si-Sb-Te was proposed to prepare nano-crystal PCM based on the discovering. Performance of nano-crystal material and memory device was effectively promoted.

Original language	English
Article number	020202
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	50
Issue number	2
DOIs	https://doi.org/10.1143/JJAP.50.020202
State	Published - Feb 2011
Externally published	Yes

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title = "Mechanism of oxidation on Si2Sb2Te5 phase change material and its application",

abstract = "Uniformly oxygen doping into phase change materials (PCMs) will increase their crystallization temperatures, but natural oxidation of PCMs has an opposite effect. Mechanism of oxidation for Si2Sb2Te 5 was studied by in situ X-ray photoelectron spectroscopy, employing an oxygen content gradient sample. During an oxidation process, oxygen preferentially reacts with Si due to its smallest electronegativity value among Si, Sb, and Te elements. Models have been proposed for the different mechanisms of oxidation. O-doping into Si-Sb-Te was proposed to prepare nano-crystal PCM based on the discovering. Performance of nano-crystal material and memory device was effectively promoted.",

author = "Ting Zhang and Zhitang Song and Yifeng Gu and Yan Cheng and Bo Liu and Songlin Feng",

year = "2011",

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doi = "10.1143/JJAP.50.020202",

language = "英语",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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T1 - Mechanism of oxidation on Si2Sb2Te5 phase change material and its application

AU - Zhang, Ting

AU - Song, Zhitang

AU - Gu, Yifeng

AU - Cheng, Yan

AU - Liu, Bo

AU - Feng, Songlin

PY - 2011/2

Y1 - 2011/2

N2 - Uniformly oxygen doping into phase change materials (PCMs) will increase their crystallization temperatures, but natural oxidation of PCMs has an opposite effect. Mechanism of oxidation for Si2Sb2Te 5 was studied by in situ X-ray photoelectron spectroscopy, employing an oxygen content gradient sample. During an oxidation process, oxygen preferentially reacts with Si due to its smallest electronegativity value among Si, Sb, and Te elements. Models have been proposed for the different mechanisms of oxidation. O-doping into Si-Sb-Te was proposed to prepare nano-crystal PCM based on the discovering. Performance of nano-crystal material and memory device was effectively promoted.

AB - Uniformly oxygen doping into phase change materials (PCMs) will increase their crystallization temperatures, but natural oxidation of PCMs has an opposite effect. Mechanism of oxidation for Si2Sb2Te 5 was studied by in situ X-ray photoelectron spectroscopy, employing an oxygen content gradient sample. During an oxidation process, oxygen preferentially reacts with Si due to its smallest electronegativity value among Si, Sb, and Te elements. Models have been proposed for the different mechanisms of oxidation. O-doping into Si-Sb-Te was proposed to prepare nano-crystal PCM based on the discovering. Performance of nano-crystal material and memory device was effectively promoted.

UR - https://www.scopus.com/pages/publications/79951915541

U2 - 10.1143/JJAP.50.020202

DO - 10.1143/JJAP.50.020202

M3 - 文章

AN - SCOPUS:79951915541

SN - 0021-4922

VL - 50

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 2

M1 - 020202

ER -

Mechanism of oxidation on Si₂Sb₂Te₅ phase change material and its application

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