TY - JOUR
T1 - Mechanical and electronic properties of SieGe alloy in Cmmm structure
AU - Zhang, Yuhang
AU - Chai, Changchun
AU - Fan, Qingyang
AU - Yang, Yintang
AU - Xing, Mengjiang
N1 - Publisher Copyright:
© 2016 The Physical Society of the Republic of China (Taiwan).
PY - 2016
Y1 - 2016
N2 - Using the density functional theory, a first-principles calculation for a novel orthorhombic structure (z-phase) property of silicon, germanium and their alloy Si0.5Ge0.5 is carried out in this work. The crystal structure is optimized to be in agreement with existing results, and based on this, the elastic properties including elastic constants and moduli are calculated, satisfying the elastic stability criteria. The anisotropic properties are represented by multiple anisotropic factors and linear bulk moduli, and the results indicate zphase Si0.5Ge0.5 performs slight anisotropy in the c-axis direction. Besides, solid sound velocities in different propagation orientations and modes as well as Debye temperature are predicted using elastic moduli. At last, the band structure and density of states of zphase Si0.5Ge0.5are calculated, and comes out z-phase Si0.5Ge0.5is indirect band semiconductor with a narrow band gap.
AB - Using the density functional theory, a first-principles calculation for a novel orthorhombic structure (z-phase) property of silicon, germanium and their alloy Si0.5Ge0.5 is carried out in this work. The crystal structure is optimized to be in agreement with existing results, and based on this, the elastic properties including elastic constants and moduli are calculated, satisfying the elastic stability criteria. The anisotropic properties are represented by multiple anisotropic factors and linear bulk moduli, and the results indicate zphase Si0.5Ge0.5 performs slight anisotropy in the c-axis direction. Besides, solid sound velocities in different propagation orientations and modes as well as Debye temperature are predicted using elastic moduli. At last, the band structure and density of states of zphase Si0.5Ge0.5are calculated, and comes out z-phase Si0.5Ge0.5is indirect band semiconductor with a narrow band gap.
KW - Anisotropic properties
KW - Elastic properties
KW - Electronic properties
KW - Si-Ge alloy
UR - https://www.scopus.com/pages/publications/84975321418
U2 - 10.1016/j.cjph.2016.04.016
DO - 10.1016/j.cjph.2016.04.016
M3 - 文章
AN - SCOPUS:84975321418
SN - 0577-9073
VL - 54
SP - 298
EP - 307
JO - Chinese Journal of Physics
JF - Chinese Journal of Physics
IS - 2
ER -