Measurement of resonant defect states in narrow gap semiconductors

Liang Jin Wu; Kun Liu; Jun Hao Chu

Measurement of resonant defect states in narrow gap semiconductors

Liang Jin Wu^*
, Kun Liu
, Jun Hao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

By using a newly developed measuring technique, i.e. the quantum capacitance spectroscopy, resonant defect states were observed in the valence band and the conduction band of narrow gap semiconductor InSb and HgCdTe materials. On the basis of a developed experimental model, the properties of the resonant defect states are investigated.

Original language	English
Pages (from-to)	968
Number of pages	1
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	46
Issue number	5
State	Published - May 1997
Externally published	Yes

Cite this

@article{893da5d236a64dfab5709a99223e21d6,

title = "Measurement of resonant defect states in narrow gap semiconductors",

abstract = "By using a newly developed measuring technique, i.e. the quantum capacitance spectroscopy, resonant defect states were observed in the valence band and the conduction band of narrow gap semiconductor InSb and HgCdTe materials. On the basis of a developed experimental model, the properties of the resonant defect states are investigated.",

author = "Wu, \{Liang Jin\} and Kun Liu and Chu, \{Jun Hao\}",

year = "1997",

month = may,

language = "英语",

volume = "46",

pages = "968",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

number = "5",

}

TY - JOUR

T1 - Measurement of resonant defect states in narrow gap semiconductors

AU - Wu, Liang Jin

AU - Liu, Kun

AU - Chu, Jun Hao

PY - 1997/5

Y1 - 1997/5

N2 - By using a newly developed measuring technique, i.e. the quantum capacitance spectroscopy, resonant defect states were observed in the valence band and the conduction band of narrow gap semiconductor InSb and HgCdTe materials. On the basis of a developed experimental model, the properties of the resonant defect states are investigated.

AB - By using a newly developed measuring technique, i.e. the quantum capacitance spectroscopy, resonant defect states were observed in the valence band and the conduction band of narrow gap semiconductor InSb and HgCdTe materials. On the basis of a developed experimental model, the properties of the resonant defect states are investigated.

UR - https://www.scopus.com/pages/publications/0346539574

M3 - 文章

AN - SCOPUS:0346539574

SN - 1000-3290

VL - 46

SP - 968

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 5

ER -

Measurement of resonant defect states in narrow gap semiconductors

Abstract

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