Measurement of electron affinity in boron-doped diamond from capacitance spectroscopy

Kun Liu; Bo Zhang; Mingfang Wan; J. H. Chu; C. Johnston; S. Roth

doi:10.1063/1.119044

Measurement of electron affinity in boron-doped diamond from capacitance spectroscopy

Kun Liu, Bo Zhang, Mingfang Wan, J. H. Chu, C. Johnston, S. Roth

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Boron-doped diamond film sample has been grown on (100) silicon substrate using the microwave enhanced chemical vapor deposition method. It is found that the sample has very good material qualities and an excellent (100) surface morphology. Au/diamond Schottky was fabricated on the (100) surface to study electron affinity of the diamond sample. By measuring frequency dependence capacitance-voltage spectroscopy of the Schottky sample in high vacuum and at room temperature, a very small electron affinity of about 0.025 eV and a work function of about 5.165 eV have been obtained for the (100) surface of the diamond sample supposing the diamond band gap energy is 5.5 eV.

Original language	English
Pages (from-to)	2891-2893
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	21
DOIs	https://doi.org/10.1063/1.119044
State	Published - 26 May 1997
Externally published	Yes

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title = "Measurement of electron affinity in boron-doped diamond from capacitance spectroscopy",

abstract = "Boron-doped diamond film sample has been grown on (100) silicon substrate using the microwave enhanced chemical vapor deposition method. It is found that the sample has very good material qualities and an excellent (100) surface morphology. Au/diamond Schottky was fabricated on the (100) surface to study electron affinity of the diamond sample. By measuring frequency dependence capacitance-voltage spectroscopy of the Schottky sample in high vacuum and at room temperature, a very small electron affinity of about 0.025 eV and a work function of about 5.165 eV have been obtained for the (100) surface of the diamond sample supposing the diamond band gap energy is 5.5 eV.",

author = "Kun Liu and Bo Zhang and Mingfang Wan and Chu, \{J. H.\} and C. Johnston and S. Roth",

year = "1997",

month = may,

day = "26",

doi = "10.1063/1.119044",

language = "英语",

volume = "70",

pages = "2891--2893",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

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T1 - Measurement of electron affinity in boron-doped diamond from capacitance spectroscopy

AU - Liu, Kun

AU - Zhang, Bo

AU - Wan, Mingfang

AU - Chu, J. H.

AU - Johnston, C.

AU - Roth, S.

PY - 1997/5/26

Y1 - 1997/5/26

N2 - Boron-doped diamond film sample has been grown on (100) silicon substrate using the microwave enhanced chemical vapor deposition method. It is found that the sample has very good material qualities and an excellent (100) surface morphology. Au/diamond Schottky was fabricated on the (100) surface to study electron affinity of the diamond sample. By measuring frequency dependence capacitance-voltage spectroscopy of the Schottky sample in high vacuum and at room temperature, a very small electron affinity of about 0.025 eV and a work function of about 5.165 eV have been obtained for the (100) surface of the diamond sample supposing the diamond band gap energy is 5.5 eV.

AB - Boron-doped diamond film sample has been grown on (100) silicon substrate using the microwave enhanced chemical vapor deposition method. It is found that the sample has very good material qualities and an excellent (100) surface morphology. Au/diamond Schottky was fabricated on the (100) surface to study electron affinity of the diamond sample. By measuring frequency dependence capacitance-voltage spectroscopy of the Schottky sample in high vacuum and at room temperature, a very small electron affinity of about 0.025 eV and a work function of about 5.165 eV have been obtained for the (100) surface of the diamond sample supposing the diamond band gap energy is 5.5 eV.

UR - https://www.scopus.com/pages/publications/0002753683

U2 - 10.1063/1.119044

DO - 10.1063/1.119044

M3 - 文章

AN - SCOPUS:0002753683

SN - 0003-6951

VL - 70

SP - 2891

EP - 2893

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Measurement of electron affinity in boron-doped diamond from capacitance spectroscopy

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