Abstract
A Schottky barrier structure is fabricated on boron-doped diamond film, which is deposited on a (100) silicon substrate using the microwave enhanced chemical vapor deposition method. After optimizing experimental conditions, the flatband capacitance is measured for the Schottky barrier structure in the temperature range of 307-451 K. An electrical activation energy of about 362.4 ± 15.1 meV is obtained from the experimental data in the temperature range of 373-451 K. which is attributed to boron acceptors in the diamond film. The studies indicate that the flatband capacitance measurement is a feasible and useful tool in the electrical activation energy investigations of wide-gap semiconductors, because the ohmic contact problem inherent to these kinds of semiconductors can be avoided.
| Original language | English |
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| Pages (from-to) | 4202-4205 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 83 |
| Issue number | 8 |
| DOIs | |
| State | Published - 15 Apr 1998 |
| Externally published | Yes |