MBE growth of HgCdTe and device applications

Li He; Yanq Wu; Shanli Wang; Meifang Yu; Lu Chen; Yimin Qiao; Jianrong Yang; Weizheng Fang; Yanjin Li; Qingyao Zhang; Rijun Ding; Junhao Chu

doi:10.1117/12.408462

MBE growth of HgCdTe and device applications

Li He^*
, Yanq Wu
, Shanli Wang
, Meifang Yu
, Lu Chen
, Yimin Qiao
, Jianrong Yang
, Weizheng Fang
, Yanjin Li
, Qingyao Zhang
, Rijun Ding
, Junhao Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The recent progress in MBE growth of HgCdTe at the Research Center for Advanced Materials and Devices, and the National Laboratory for Infrared Physics is reported. It is found that the excellent compositional uniformity and reproducibility of HgCdTe can be archived by MBE technique. The results of surface morphology, dislocation density, electrical properties and focal plane array detectors are described in the paper.

Original language	English
Pages (from-to)	311-316
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4086
DOIs	https://doi.org/10.1117/12.408462
State	Published - 2000
Externally published	Yes
Event	4th International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 8 May 2000 → 11 May 2000

Keywords

Annealing
Dislocations
Focal plane arrays
HgCdTe
MBE

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10.1117/12.408462

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title = "MBE growth of HgCdTe and device applications",

abstract = "The recent progress in MBE growth of HgCdTe at the Research Center for Advanced Materials and Devices, and the National Laboratory for Infrared Physics is reported. It is found that the excellent compositional uniformity and reproducibility of HgCdTe can be archived by MBE technique. The results of surface morphology, dislocation density, electrical properties and focal plane array detectors are described in the paper.",

keywords = "Annealing, Dislocations, Focal plane arrays, HgCdTe, MBE",

author = "Li He and Yanq Wu and Shanli Wang and Meifang Yu and Lu Chen and Yimin Qiao and Jianrong Yang and Weizheng Fang and Yanjin Li and Qingyao Zhang and Rijun Ding and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 200 COPYRIGHT SPIE.; 4th International Conference on Thin Film Physics and Applications ; Conference date: 08-05-2000 Through 11-05-2000",

year = "2000",

doi = "10.1117/12.408462",

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TY - JOUR

T1 - MBE growth of HgCdTe and device applications

AU - He, Li

AU - Wu, Yanq

AU - Wang, Shanli

AU - Yu, Meifang

AU - Chen, Lu

AU - Qiao, Yimin

AU - Yang, Jianrong

AU - Fang, Weizheng

AU - Li, Yanjin

AU - Zhang, Qingyao

AU - Ding, Rijun

AU - Chu, Junhao

N1 - Publisher Copyright: © 200 COPYRIGHT SPIE.

PY - 2000

Y1 - 2000

N2 - The recent progress in MBE growth of HgCdTe at the Research Center for Advanced Materials and Devices, and the National Laboratory for Infrared Physics is reported. It is found that the excellent compositional uniformity and reproducibility of HgCdTe can be archived by MBE technique. The results of surface morphology, dislocation density, electrical properties and focal plane array detectors are described in the paper.

AB - The recent progress in MBE growth of HgCdTe at the Research Center for Advanced Materials and Devices, and the National Laboratory for Infrared Physics is reported. It is found that the excellent compositional uniformity and reproducibility of HgCdTe can be archived by MBE technique. The results of surface morphology, dislocation density, electrical properties and focal plane array detectors are described in the paper.

KW - Annealing

KW - Dislocations

KW - Focal plane arrays

KW - HgCdTe

KW - MBE

UR - https://www.scopus.com/pages/publications/85089070895

U2 - 10.1117/12.408462

DO - 10.1117/12.408462

M3 - 会议文章

AN - SCOPUS:85089070895

SN - 0277-786X

VL - 4086

SP - 311

EP - 316

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - 4th International Conference on Thin Film Physics and Applications

Y2 - 8 May 2000 through 11 May 2000

ER -

MBE growth of HgCdTe and device applications

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Keywords

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