Making ferromagnetic metal MnSi ultrathin films semiconductor

De Yong Wang; Xu Yang; Wei He; Qing Feng Zhan; Hai Feng Du; Hao Liang Liu; Xiang Qun Zhang; Zhao Hua Cheng

doi:10.1016/j.jmmm.2021.168252

Making ferromagnetic metal MnSi ultrathin films semiconductor

De Yong Wang
, Xu Yang
, Wei He
, Qing Feng Zhan
, Hai Feng Du
, Hao Liang Liu
, Xiang Qun Zhang
, Zhao Hua Cheng^*

^*Corresponding author for this work

CAS - Institute of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Atomically flat MnSi films were fabricated on Si(1 1 1)-7 × 7 reconstructed surface by molecular beam epitaxy(MBE). Both scanning tunneling microscopy (STM) images and low energy electron diffraction (LEED) patterns demonstrate a well-defined (3×3)R30^o structure reconstruction. A thickness-driven metal–semiconductor transition in MnSi ultrathin films was observed with decreasing the thickness down to 6 ML (monolayers). The temperature dependence of the resistance and the negative magnetoconductivity suggest the MnSi ultrathin films with thickness lower than 6ML exhibit weak anti-localization (WAL) of two-dimensional (2D) electron systems. This finding that not only advances our understanding of the mechanism of thickness-driven metal–semiconductor transition, but also provides a new strategy to use ferromagnetic semiconductor as spin injector in spintronic devices.

Original language	English
Article number	168252
Journal	Journal of Magnetism and Magnetic Materials
Volume	538
DOIs	https://doi.org/10.1016/j.jmmm.2021.168252
State	Published - 15 Nov 2021
Externally published	Yes

Keywords

Metal-semiconductor Transition
Spintronics
Weak anti-localization

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10.1016/j.jmmm.2021.168252

Cite this

@article{929cd70662b54257b51d56db35f687d7,

title = "Making ferromagnetic metal MnSi ultrathin films semiconductor",

abstract = "Atomically flat MnSi films were fabricated on Si(1 1 1)-7 × 7 reconstructed surface by molecular beam epitaxy(MBE). Both scanning tunneling microscopy (STM) images and low energy electron diffraction (LEED) patterns demonstrate a well-defined (3×3)R30o structure reconstruction. A thickness-driven metal–semiconductor transition in MnSi ultrathin films was observed with decreasing the thickness down to 6 ML (monolayers). The temperature dependence of the resistance and the negative magnetoconductivity suggest the MnSi ultrathin films with thickness lower than 6ML exhibit weak anti-localization (WAL) of two-dimensional (2D) electron systems. This finding that not only advances our understanding of the mechanism of thickness-driven metal–semiconductor transition, but also provides a new strategy to use ferromagnetic semiconductor as spin injector in spintronic devices.",

keywords = "Metal-semiconductor Transition, Spintronics, Weak anti-localization",

author = "Wang, \{De Yong\} and Xu Yang and Wei He and Zhan, \{Qing Feng\} and Du, \{Hai Feng\} and Liu, \{Hao Liang\} and Zhang, \{Xiang Qun\} and Cheng, \{Zhao Hua\}",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2021",

month = nov,

day = "15",

doi = "10.1016/j.jmmm.2021.168252",

language = "英语",

volume = "538",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Making ferromagnetic metal MnSi ultrathin films semiconductor

AU - Wang, De Yong

AU - Yang, Xu

AU - He, Wei

AU - Zhan, Qing Feng

AU - Du, Hai Feng

AU - Liu, Hao Liang

AU - Zhang, Xiang Qun

AU - Cheng, Zhao Hua

PY - 2021/11/15

Y1 - 2021/11/15

N2 - Atomically flat MnSi films were fabricated on Si(1 1 1)-7 × 7 reconstructed surface by molecular beam epitaxy(MBE). Both scanning tunneling microscopy (STM) images and low energy electron diffraction (LEED) patterns demonstrate a well-defined (3×3)R30o structure reconstruction. A thickness-driven metal–semiconductor transition in MnSi ultrathin films was observed with decreasing the thickness down to 6 ML (monolayers). The temperature dependence of the resistance and the negative magnetoconductivity suggest the MnSi ultrathin films with thickness lower than 6ML exhibit weak anti-localization (WAL) of two-dimensional (2D) electron systems. This finding that not only advances our understanding of the mechanism of thickness-driven metal–semiconductor transition, but also provides a new strategy to use ferromagnetic semiconductor as spin injector in spintronic devices.

AB - Atomically flat MnSi films were fabricated on Si(1 1 1)-7 × 7 reconstructed surface by molecular beam epitaxy(MBE). Both scanning tunneling microscopy (STM) images and low energy electron diffraction (LEED) patterns demonstrate a well-defined (3×3)R30o structure reconstruction. A thickness-driven metal–semiconductor transition in MnSi ultrathin films was observed with decreasing the thickness down to 6 ML (monolayers). The temperature dependence of the resistance and the negative magnetoconductivity suggest the MnSi ultrathin films with thickness lower than 6ML exhibit weak anti-localization (WAL) of two-dimensional (2D) electron systems. This finding that not only advances our understanding of the mechanism of thickness-driven metal–semiconductor transition, but also provides a new strategy to use ferromagnetic semiconductor as spin injector in spintronic devices.

KW - Metal-semiconductor Transition

KW - Spintronics

KW - Weak anti-localization

UR - https://www.scopus.com/pages/publications/85109007494

U2 - 10.1016/j.jmmm.2021.168252

DO - 10.1016/j.jmmm.2021.168252

M3 - 文章

AN - SCOPUS:85109007494

SN - 0304-8853

VL - 538

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

M1 - 168252

ER -

Making ferromagnetic metal MnSi ultrathin films semiconductor

Abstract

Keywords

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