Magnetotransport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures under illumination

Ning Tang, Bo Shen, Kui Han, Zhi Jian Yang, Zhi Xin Qin, Guo Yi Zhang, Tie Lin, Wen Zheng Zhou, Li Yan Shang, Jun Hao Chu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Magnetotransport properties of the two-dimensional electron gas (2DEG) in the triangular quantum well at AlxGa1-xN/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov-de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the 2DEG concentration increases and the SdH oscillation amplitudes are enhanced when there is no additional subband occupation. As the second subband becomes to be populated, the electron mobility decreases for the intersubband scattering and the 2DEG concentration of the first subband deceases. We suggest that the illumination decreases the electric field and weakens the quantum confinement of the triangular quantum well at AlxGa1-xN/GaN heterointerfaces.

Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages1122-1125
Number of pages4
DOIs
StatePublished - 2008
Externally publishedYes
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: 20 Oct 200823 Oct 2008

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Conference

Conference2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Country/TerritoryChina
CityBeijing
Period20/10/0823/10/08

Fingerprint

Dive into the research topics of 'Magnetotransport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures under illumination'. Together they form a unique fingerprint.

Cite this