Magnetotransport properties of (In,Zn)As/InAs p-n junctions

K. H. Gao; Q. W. Wang; G. Yu; T. Lin; H. Y. Deng; N. Dai; J. H. Chu

doi:10.1063/1.3576922

Magnetotransport properties of (In,Zn)As/InAs p-n junctions

K. H. Gao, Q. W. Wang, G. Yu, T. Lin, H. Y. Deng, N. Dai, J. H. Chu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

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Abstract

We study the magnetotransport properties of nonmagnetic (In,Zn)As/InAs p-n junctions prepared by liquid phase epitaxy. The junctions show a clear rectifying behavior. A relatively large positive magnetoresistance is observed and its maximum value is greater than 140% at 12 K and gets to 38% at 292 K when a small magnetic field of 1.38 T is applied, which is not related to the series resistance. We attribute the observed magnetoresistance to the impurity-assisted tunneling mechanism.

Original language	English
Article number	142110
Journal	Applied Physics Letters
Volume	98
Issue number	14
DOIs	https://doi.org/10.1063/1.3576922
State	Published - 4 Apr 2011

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abstract = "We study the magnetotransport properties of nonmagnetic (In,Zn)As/InAs p-n junctions prepared by liquid phase epitaxy. The junctions show a clear rectifying behavior. A relatively large positive magnetoresistance is observed and its maximum value is greater than 140\% at 12 K and gets to 38\% at 292 K when a small magnetic field of 1.38 T is applied, which is not related to the series resistance. We attribute the observed magnetoresistance to the impurity-assisted tunneling mechanism.",

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AU - Gao, K. H.

AU - Wang, Q. W.

AU - Yu, G.

AU - Lin, T.

AU - Deng, H. Y.

AU - Dai, N.

AU - Chu, J. H.

PY - 2011/4/4

Y1 - 2011/4/4

N2 - We study the magnetotransport properties of nonmagnetic (In,Zn)As/InAs p-n junctions prepared by liquid phase epitaxy. The junctions show a clear rectifying behavior. A relatively large positive magnetoresistance is observed and its maximum value is greater than 140% at 12 K and gets to 38% at 292 K when a small magnetic field of 1.38 T is applied, which is not related to the series resistance. We attribute the observed magnetoresistance to the impurity-assisted tunneling mechanism.

AB - We study the magnetotransport properties of nonmagnetic (In,Zn)As/InAs p-n junctions prepared by liquid phase epitaxy. The junctions show a clear rectifying behavior. A relatively large positive magnetoresistance is observed and its maximum value is greater than 140% at 12 K and gets to 38% at 292 K when a small magnetic field of 1.38 T is applied, which is not related to the series resistance. We attribute the observed magnetoresistance to the impurity-assisted tunneling mechanism.

UR - https://www.scopus.com/pages/publications/79954526725

U2 - 10.1063/1.3576922

DO - 10.1063/1.3576922

M3 - 文章

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VL - 98

JO - Applied Physics Letters

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ER -

Magnetotransport properties of (In,Zn)As/InAs p-n junctions

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