Skip to main navigation Skip to search Skip to main content

Magnetoresistance oscillations induced by intersubband scattering of two-dimensional electron gas in Al0.22Ga0.78N/GaN heterostructures

  • N. Tang*
  • , B. Shen
  • , Z. W. Zheng
  • , J. Liu
  • , D. J. Chen
  • , J. Lu
  • , R. Zhang
  • , Y. Shi
  • , Y. D. Zheng
  • , Y. S. Gui
  • , C. P. Jiang
  • , Z. J. Qiu
  • , S. L. Guo
  • , J. H. Chu
  • , K. Hoshino
  • , T. Someya
  • , Y. Arakawa
  • *Corresponding author for this work
  • Nanjing University
  • CAS - Shanghai Institute of Technical Physics
  • The University of Tokyo

Research output: Contribution to journalArticlepeer-review

Abstract

The magnetointersubband scattering (MIS) oscillations of two-dimensional electron gas (2DEG) in Al0.22Ga0.78N/GaN heterostructures was studied. The magnetotransport measurements were performed at high magnetic fields and low temperatures. It was found using the fast Fourier transform analysis that the MIS oscillations became slightly weaker with the increase in the temperature.

Original languageEnglish
Pages (from-to)5420-5422
Number of pages3
JournalJournal of Applied Physics
Volume94
Issue number8
DOIs
StatePublished - 15 Oct 2003
Externally publishedYes

Fingerprint

Dive into the research topics of 'Magnetoresistance oscillations induced by intersubband scattering of two-dimensional electron gas in Al0.22Ga0.78N/GaN heterostructures'. Together they form a unique fingerprint.

Cite this