Magnetoresistance decay and switching-field change in SiO 2-Ni dusted Co/Cu/Co structures

H. Wang; Z. C. Zhao; Y. X. Xia; Q. Y. Jin

doi:10.1063/1.1490637

Magnetoresistance decay and switching-field change in SiO ₂-Ni dusted Co/Cu/Co structures

H. Wang^*
, Z. C. Zhao
, Y. X. Xia
, Q. Y. Jin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The effect of interfacial planar doping with an insulating granular layer in a sandwiched structure was studied. By inserting a thin SiO ₂-Ni layer at either the Co/Cu (top) or Cu/Co (bottom) interface in sandwiched Co/Cu/Co structures, the magnetoresistance curve as a function of the magnetic field changed significantly. This change was due to a reduction of interlayer coupling and to a change in the switching mechanism of the magnetizations caused by modification of the interface. In addition, the dusted Co/Cu/Co structures showed flat peaks and small switching fields that would be very useful for practical applications.

Original language	English
Pages (from-to)	1709-1711
Number of pages	3
Journal	Journal of Applied Physics
Volume	92
Issue number	3
DOIs	https://doi.org/10.1063/1.1490637
State	Published - 1 Aug 2002
Externally published	Yes

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title = "Magnetoresistance decay and switching-field change in SiO 2-Ni dusted Co/Cu/Co structures",

abstract = "The effect of interfacial planar doping with an insulating granular layer in a sandwiched structure was studied. By inserting a thin SiO 2-Ni layer at either the Co/Cu (top) or Cu/Co (bottom) interface in sandwiched Co/Cu/Co structures, the magnetoresistance curve as a function of the magnetic field changed significantly. This change was due to a reduction of interlayer coupling and to a change in the switching mechanism of the magnetizations caused by modification of the interface. In addition, the dusted Co/Cu/Co structures showed flat peaks and small switching fields that would be very useful for practical applications.",

author = "H. Wang and Zhao, \{Z. C.\} and Xia, \{Y. X.\} and Jin, \{Q. Y.\}",

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AU - Wang, H.

AU - Zhao, Z. C.

AU - Xia, Y. X.

AU - Jin, Q. Y.

PY - 2002/8/1

Y1 - 2002/8/1

N2 - The effect of interfacial planar doping with an insulating granular layer in a sandwiched structure was studied. By inserting a thin SiO 2-Ni layer at either the Co/Cu (top) or Cu/Co (bottom) interface in sandwiched Co/Cu/Co structures, the magnetoresistance curve as a function of the magnetic field changed significantly. This change was due to a reduction of interlayer coupling and to a change in the switching mechanism of the magnetizations caused by modification of the interface. In addition, the dusted Co/Cu/Co structures showed flat peaks and small switching fields that would be very useful for practical applications.

AB - The effect of interfacial planar doping with an insulating granular layer in a sandwiched structure was studied. By inserting a thin SiO 2-Ni layer at either the Co/Cu (top) or Cu/Co (bottom) interface in sandwiched Co/Cu/Co structures, the magnetoresistance curve as a function of the magnetic field changed significantly. This change was due to a reduction of interlayer coupling and to a change in the switching mechanism of the magnetizations caused by modification of the interface. In addition, the dusted Co/Cu/Co structures showed flat peaks and small switching fields that would be very useful for practical applications.

UR - https://www.scopus.com/pages/publications/0036677526

U2 - 10.1063/1.1490637

DO - 10.1063/1.1490637

M3 - 文章

AN - SCOPUS:0036677526

SN - 0021-8979

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SP - 1709

EP - 1711

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Magnetoresistance decay and switching-field change in SiO ₂-Ni dusted Co/Cu/Co structures

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