Magnetointersubband scattering oscillations of two-dimensional electron gas in AlxGai1-xN/GaN heterostructures

Ning Tang; Bo Shen; Chunmin Tao; Dunjun Chen; Yongsheng Gui; Chunpmg Jiang; Zhijun Qiu; Rong Zhang; Youdou Zheng; Shaoling Guo; Junhao Chu

Magnetointersubband scattering oscillations of two-dimensional electron gas in Al_xGai_1-xN/GaN heterostructures

Ning Tang
, Bo Shen^*
, Chunmin Tao
, Dunjun Chen
, Yongsheng Gui
, Chunpmg Jiang
, Zhijun Qiu
, Rong Zhang
, Youdou Zheng
, Shaoling Guo
, Junhao Chu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Magnetointersubband scattering (MIS) oscillations of two-dimensional electron gas (2DEG) in unintentionally doped Al_0.22Ga _0.78sN/GaN heterostructures have been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. It is found that the MIS oscillations become slightly weaker with increasing temperature and become dominant with increasing temperature. Due to the different temperature dependence between the Shubnikov-de Haas (SdH) and the MIS oscillations, it is observed that the SdH oscillations modulated strongly by the MIS oscillations between 10 K and 17 K while the modulations are very weak at other temperatures.

Original language	English
Title of host publication	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Editors	X.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	198-201
Number of pages	4
Volume	4
ISBN (Print)	7309039157
State	Published - 2004
Externally published	Yes
Event	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China Duration: 15 Mar 2004 → 16 Mar 2004

Conference

Conference	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Country/Territory	China
City	Shanghai
Period	15/03/04 → 16/03/04

Cite this

Tang, N., Shen, B., Tao, C., Chen, D., Gui, Y., Jiang, C., Qiu, Z., Zhang, R., Zheng, Y., Guo, S., & Chu, J. (2004). Magnetointersubband scattering oscillations of two-dimensional electron gas in Al_xGai_1-xN/GaN heterostructures. In X. P. Qu, G. P. Ru, B. Z. Li, B. Mizuno, & H. Iwai (Eds.), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 (Vol. 4, pp. 198-201). Institute of Electrical and Electronics Engineers Inc..

Tang, Ning ; Shen, Bo ; Tao, Chunmin et al. / Magnetointersubband scattering oscillations of two-dimensional electron gas in Al_xGai_1-xN/GaN heterostructures. Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. editor / X.P. Qu ; G.P. Ru ; B.Z. Li ; B. Mizuno ; H. Iwai. Vol. 4 Institute of Electrical and Electronics Engineers Inc., 2004. pp. 198-201

@inproceedings{eaff825c99ea46caa1d9016e04eba3d1,

title = "Magnetointersubband scattering oscillations of two-dimensional electron gas in AlxGai1-xN/GaN heterostructures",

abstract = "Magnetointersubband scattering (MIS) oscillations of two-dimensional electron gas (2DEG) in unintentionally doped Al0.22Ga 0.78sN/GaN heterostructures have been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. It is found that the MIS oscillations become slightly weaker with increasing temperature and become dominant with increasing temperature. Due to the different temperature dependence between the Shubnikov-de Haas (SdH) and the MIS oscillations, it is observed that the SdH oscillations modulated strongly by the MIS oscillations between 10 K and 17 K while the modulations are very weak at other temperatures.",

author = "Ning Tang and Bo Shen and Chunmin Tao and Dunjun Chen and Yongsheng Gui and Chunpmg Jiang and Zhijun Qiu and Rong Zhang and Youdou Zheng and Shaoling Guo and Junhao Chu",

year = "2004",

language = "英语",

isbn = "7309039157",

volume = "4",

pages = "198--201",

editor = "X.P. Qu and G.P. Ru and B.Z. Li and B. Mizuno and H. Iwai",

booktitle = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "美国",

note = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 ; Conference date: 15-03-2004 Through 16-03-2004",

}

Tang, N, Shen, B, Tao, C, Chen, D, Gui, Y, Jiang, C, Qiu, Z, Zhang, R, Zheng, Y, Guo, S & Chu, J 2004, Magnetointersubband scattering oscillations of two-dimensional electron gas in Al_xGai_1-xN/GaN heterostructures. in XP Qu, GP Ru, BZ Li, B Mizuno & H Iwai (eds), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. vol. 4, Institute of Electrical and Electronics Engineers Inc., pp. 198-201, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004, Shanghai, China, 15/03/04.

Magnetointersubband scattering oscillations of two-dimensional electron gas in Al_xGai_1-xN/GaN heterostructures. / Tang, Ning; Shen, Bo; Tao, Chunmin et al.
Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. ed. / X.P. Qu; G.P. Ru; B.Z. Li; B. Mizuno; H. Iwai. Vol. 4 Institute of Electrical and Electronics Engineers Inc., 2004. p. 198-201.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Magnetointersubband scattering oscillations of two-dimensional electron gas in AlxGai1-xN/GaN heterostructures

AU - Tang, Ning

AU - Shen, Bo

AU - Tao, Chunmin

AU - Chen, Dunjun

AU - Gui, Yongsheng

AU - Jiang, Chunpmg

AU - Qiu, Zhijun

AU - Zhang, Rong

AU - Zheng, Youdou

AU - Guo, Shaoling

AU - Chu, Junhao

PY - 2004

Y1 - 2004

N2 - Magnetointersubband scattering (MIS) oscillations of two-dimensional electron gas (2DEG) in unintentionally doped Al0.22Ga 0.78sN/GaN heterostructures have been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. It is found that the MIS oscillations become slightly weaker with increasing temperature and become dominant with increasing temperature. Due to the different temperature dependence between the Shubnikov-de Haas (SdH) and the MIS oscillations, it is observed that the SdH oscillations modulated strongly by the MIS oscillations between 10 K and 17 K while the modulations are very weak at other temperatures.

AB - Magnetointersubband scattering (MIS) oscillations of two-dimensional electron gas (2DEG) in unintentionally doped Al0.22Ga 0.78sN/GaN heterostructures have been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. It is found that the MIS oscillations become slightly weaker with increasing temperature and become dominant with increasing temperature. Due to the different temperature dependence between the Shubnikov-de Haas (SdH) and the MIS oscillations, it is observed that the SdH oscillations modulated strongly by the MIS oscillations between 10 K and 17 K while the modulations are very weak at other temperatures.

UR - https://www.scopus.com/pages/publications/3543130206

M3 - 会议稿件

AN - SCOPUS:3543130206

SN - 7309039157

VL - 4

SP - 198

EP - 201

BT - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

A2 - Qu, X.P.

A2 - Ru, G.P.

A2 - Li, B.Z.

A2 - Mizuno, B.

A2 - Iwai, H.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Y2 - 15 March 2004 through 16 March 2004

ER -

Tang N, Shen B, Tao C, Chen D, Gui Y, Jiang C et al. Magnetointersubband scattering oscillations of two-dimensional electron gas in Al_xGai_1-xN/GaN heterostructures. In Qu XP, Ru GP, Li BZ, Mizuno B, Iwai H, editors, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. Vol. 4. Institute of Electrical and Electronics Engineers Inc. 2004. p. 198-201

Magnetointersubband scattering oscillations of two-dimensional electron gas in Al_xGai_1-xN/GaN heterostructures

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