Magneto-transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well

Zhi Jun Qiu; Yong Sheng Gui; Li Jie Cui; Yi Ping Zeng; Zhi Ming Huang; Xiao Zhou Shu; Ning Dai; Shao Ling Guo; Jun Hao Chu

Magneto-transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well

Zhi Jun Qiu^*
, Yong Sheng Gui
, Li Jie Cui
, Yi Ping Zeng
, Zhi Ming Huang
, Xiao Zhou Shu
, Ning Dai
, Shao Ling Guo
, Jun Hao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Beating patterns in longitudinal resistance caused by the symmetric and antisymmetric states were observed in a heavily (loped InGaAs/InAlAs quantum well by using variable temperature Hall measurement. The energy gap of symmetric and antisymmetric states is estimated to be 4 meV from the analysis of beating node positions. In addition, the temperature dependences of the subband electron mobility and concentration were also studied from the mobility spectrum and multicarrier fitting procedure.

Original language	English
Pages (from-to)	329-332
Number of pages	4
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	23
Issue number	5
State	Published - Oct 2004
Externally published	Yes

Keywords

Antisymmetric state
InGaAs/InAlAs quantum well
Magneto-transport
Symmetric state

Cite this

@article{fc9ae9ec8f084b9092c22e3327e96ac8,

title = "Magneto-transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well",

abstract = "Beating patterns in longitudinal resistance caused by the symmetric and antisymmetric states were observed in a heavily (loped InGaAs/InAlAs quantum well by using variable temperature Hall measurement. The energy gap of symmetric and antisymmetric states is estimated to be 4 meV from the analysis of beating node positions. In addition, the temperature dependences of the subband electron mobility and concentration were also studied from the mobility spectrum and multicarrier fitting procedure.",

keywords = "Antisymmetric state, InGaAs/InAlAs quantum well, Magneto-transport, Symmetric state",

author = "Qiu, \{Zhi Jun\} and Gui, \{Yong Sheng\} and Cui, \{Li Jie\} and Zeng, \{Yi Ping\} and Huang, \{Zhi Ming\} and Shu, \{Xiao Zhou\} and Ning Dai and Guo, \{Shao Ling\} and Chu, \{Jun Hao\}",

year = "2004",

month = oct,

language = "英语",

volume = "23",

pages = "329--332",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

number = "5",

}

TY - JOUR

T1 - Magneto-transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well

AU - Qiu, Zhi Jun

AU - Gui, Yong Sheng

AU - Cui, Li Jie

AU - Zeng, Yi Ping

AU - Huang, Zhi Ming

AU - Shu, Xiao Zhou

AU - Dai, Ning

AU - Guo, Shao Ling

AU - Chu, Jun Hao

PY - 2004/10

Y1 - 2004/10

N2 - Beating patterns in longitudinal resistance caused by the symmetric and antisymmetric states were observed in a heavily (loped InGaAs/InAlAs quantum well by using variable temperature Hall measurement. The energy gap of symmetric and antisymmetric states is estimated to be 4 meV from the analysis of beating node positions. In addition, the temperature dependences of the subband electron mobility and concentration were also studied from the mobility spectrum and multicarrier fitting procedure.

AB - Beating patterns in longitudinal resistance caused by the symmetric and antisymmetric states were observed in a heavily (loped InGaAs/InAlAs quantum well by using variable temperature Hall measurement. The energy gap of symmetric and antisymmetric states is estimated to be 4 meV from the analysis of beating node positions. In addition, the temperature dependences of the subband electron mobility and concentration were also studied from the mobility spectrum and multicarrier fitting procedure.

KW - Antisymmetric state

KW - InGaAs/InAlAs quantum well

KW - Magneto-transport

KW - Symmetric state

UR - https://www.scopus.com/pages/publications/10944245498

M3 - 文章

AN - SCOPUS:10944245498

SN - 1001-9014

VL - 23

SP - 329

EP - 332

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 5

ER -

Magneto-transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well

Abstract

Keywords

Other files and links

Fingerprint

Cite this