Abstract
A hybrid conduction analysis method mixed with multi-carrier fitting procedure and mobility spectrum is present to analyze the experimental Hall and resistivity data of MBE grown Hg1-xCdxTe samples as a function of magnetic field. This method enables the conductivity contribution of bulk electron to separated from that of interface electron. Applications to temperature-dependent Hall and resistivity data confirm that the procedure may be regarded accurate and reliable one. The method seems to be a suitable tool for the routine electrical characterization of semiconductor materials and devices.
| Original language | English |
|---|---|
| Pages (from-to) | 1635 |
| Number of pages | 1 |
| Journal | Wuli Xuebao/Acta Physica Sinica |
| Volume | 46 |
| Issue number | 8 |
| State | Published - 1997 |
| Externally published | Yes |