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Magneto-transport characterization of MBE-grown Hg1-xCdxTe

  • Yong Sheng Gui*
  • , Guo Zhen Zheng
  • , Jun Hao Chu
  • , Shao Ling Guo
  • , Ding Yuan Tang
  • *Corresponding author for this work
  • Chinese Academy of Sciences

Research output: Contribution to journalArticlepeer-review

Abstract

A hybrid conduction analysis method mixed with multi-carrier fitting procedure and mobility spectrum is present to analyze the experimental Hall and resistivity data of MBE grown Hg1-xCdxTe samples as a function of magnetic field. This method enables the conductivity contribution of bulk electron to separated from that of interface electron. Applications to temperature-dependent Hall and resistivity data confirm that the procedure may be regarded accurate and reliable one. The method seems to be a suitable tool for the routine electrical characterization of semiconductor materials and devices.

Original languageEnglish
Pages (from-to)1635
Number of pages1
JournalWuli Xuebao/Acta Physica Sinica
Volume46
Issue number8
StatePublished - 1997
Externally publishedYes

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