Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAIAs/lnGaAs single quantum well

Wen Zheng Zhou; Wei Yao; Bo Zhu; Zhi Jun Qiu; Shao Ling Guo; Tie Lin; Li Jie Cui; Yong Sheng Gui; Jun Hao Chu

doi:10.7498/aps.55.2044

Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAIAs/lnGaAs single quantum well

Wen Zheng Zhou, Wei Yao, Bo Zhu, Zhi Jun Qiu, Shao Ling Guo, Tie Lin, Li Jie Cui, Yong Sheng Gui, Jun Hao Chu

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Magneto-transport measurements have been carried out on a Si heavily δ-doped In_0.52Al_0.48As/In _0.53Ga_0.47As single quantum well in the temperature range between 1.5 and 60 K under magnetic field up to 10 T. We studied the Shubnikov-de Haas(SdH) effect and the Hall effect for the In_0.52Al_0.48As/In _0.53Ga_0.47As single quantum well occupied by two subbands, and have obtained the electron concentration, mobility, effective mass and energy levels respectively. The electron concentrations of the two subbands derived from mobility spectrum combined with multi-carrier fitting analysis are well consistent with the result from the SdH oscillation. From fast Fourier transform analysis for d²ρ/dB²-1/B, it is observed that there is a frequency of f₁-f₂ insensitive to the temperature, besides the frequencies f₁, f₂ for the two subbands and the frequency doubling 2f₁, both are dependent on the temperature. This is because that the electrons occupying the two different subbands almost have the same effective mass in the quantum well and the magneto-intersubband scattering between the two subbands is strong.

Original language	English
Pages (from-to)	2044-2048
Number of pages	5
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	55
Issue number	4
DOIs	https://doi.org/10.7498/aps.55.2044
State	Published - Apr 2006
Externally published	Yes

Keywords

InAIAs/lnGaAs single quantum well
Magneto-intersubband scattering
SdH oscillation
Two-dimensional electron gas

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@article{5601919388794bfeb5e5b82dad7fa32f,

title = "Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAIAs/lnGaAs single quantum well",

abstract = "Magneto-transport measurements have been carried out on a Si heavily δ-doped In0.52Al0.48As/In 0.53Ga0.47As single quantum well in the temperature range between 1.5 and 60 K under magnetic field up to 10 T. We studied the Shubnikov-de Haas(SdH) effect and the Hall effect for the In0.52Al0.48As/In 0.53Ga0.47As single quantum well occupied by two subbands, and have obtained the electron concentration, mobility, effective mass and energy levels respectively. The electron concentrations of the two subbands derived from mobility spectrum combined with multi-carrier fitting analysis are well consistent with the result from the SdH oscillation. From fast Fourier transform analysis for d2ρ/dB2-1/B, it is observed that there is a frequency of f1-f2 insensitive to the temperature, besides the frequencies f1, f2 for the two subbands and the frequency doubling 2f1, both are dependent on the temperature. This is because that the electrons occupying the two different subbands almost have the same effective mass in the quantum well and the magneto-intersubband scattering between the two subbands is strong.",

keywords = "InAIAs/lnGaAs single quantum well, Magneto-intersubband scattering, SdH oscillation, Two-dimensional electron gas",

author = "Zhou, \{Wen Zheng\} and Wei Yao and Bo Zhu and Qiu, \{Zhi Jun\} and Guo, \{Shao Ling\} and Tie Lin and Cui, \{Li Jie\} and Gui, \{Yong Sheng\} and Chu, \{Jun Hao\}",

year = "2006",

month = apr,

doi = "10.7498/aps.55.2044",

language = "英语",

volume = "55",

pages = "2044--2048",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Institute of Physics, Chinese Academy of Sciences",

number = "4",

}

TY - JOUR

T1 - Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAIAs/lnGaAs single quantum well

AU - Zhou, Wen Zheng

AU - Yao, Wei

AU - Zhu, Bo

AU - Qiu, Zhi Jun

AU - Guo, Shao Ling

AU - Lin, Tie

AU - Cui, Li Jie

AU - Gui, Yong Sheng

AU - Chu, Jun Hao

PY - 2006/4

Y1 - 2006/4

N2 - Magneto-transport measurements have been carried out on a Si heavily δ-doped In0.52Al0.48As/In 0.53Ga0.47As single quantum well in the temperature range between 1.5 and 60 K under magnetic field up to 10 T. We studied the Shubnikov-de Haas(SdH) effect and the Hall effect for the In0.52Al0.48As/In 0.53Ga0.47As single quantum well occupied by two subbands, and have obtained the electron concentration, mobility, effective mass and energy levels respectively. The electron concentrations of the two subbands derived from mobility spectrum combined with multi-carrier fitting analysis are well consistent with the result from the SdH oscillation. From fast Fourier transform analysis for d2ρ/dB2-1/B, it is observed that there is a frequency of f1-f2 insensitive to the temperature, besides the frequencies f1, f2 for the two subbands and the frequency doubling 2f1, both are dependent on the temperature. This is because that the electrons occupying the two different subbands almost have the same effective mass in the quantum well and the magneto-intersubband scattering between the two subbands is strong.

AB - Magneto-transport measurements have been carried out on a Si heavily δ-doped In0.52Al0.48As/In 0.53Ga0.47As single quantum well in the temperature range between 1.5 and 60 K under magnetic field up to 10 T. We studied the Shubnikov-de Haas(SdH) effect and the Hall effect for the In0.52Al0.48As/In 0.53Ga0.47As single quantum well occupied by two subbands, and have obtained the electron concentration, mobility, effective mass and energy levels respectively. The electron concentrations of the two subbands derived from mobility spectrum combined with multi-carrier fitting analysis are well consistent with the result from the SdH oscillation. From fast Fourier transform analysis for d2ρ/dB2-1/B, it is observed that there is a frequency of f1-f2 insensitive to the temperature, besides the frequencies f1, f2 for the two subbands and the frequency doubling 2f1, both are dependent on the temperature. This is because that the electrons occupying the two different subbands almost have the same effective mass in the quantum well and the magneto-intersubband scattering between the two subbands is strong.

KW - InAIAs/lnGaAs single quantum well

KW - Magneto-intersubband scattering

KW - SdH oscillation

KW - Two-dimensional electron gas

UR - https://www.scopus.com/pages/publications/33646346129

U2 - 10.7498/aps.55.2044

DO - 10.7498/aps.55.2044

M3 - 文章

AN - SCOPUS:33646346129

SN - 1000-3290

VL - 55

SP - 2044

EP - 2048

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 4

ER -

Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAIAs/lnGaAs single quantum well

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