Magnetization processes and giant magneto-impedance effect in feCuNbSiB multilayered films

Hong Lin; Wang Zhi Yuan; Zhen Jie Zhao; Jin Ke Cheng; Hong Liang Xin; Zhi Ming Wu; Jian Zhong Ruan; Xie Long Yang

Magnetization processes and giant magneto-impedance effect in feCuNbSiB multilayered films

Hong Lin^*
, Wang Zhi Yuan
, Zhen Jie Zhao
, Jin Ke Cheng
, Hong Liang Xin
, Zhi Ming Wu
, Jian Zhong Ruan
, Xie Long Yang

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

Abstract

FeCuNbSiB multilayered films are prepared by radio frequency (RF) sputtering. The as-cast sample has a maximum GMI ratio of 44.3% at 12 MHz. Complex permeability and equivalent circuits are used to demonstrate the magnetization processes, which are relevant to GMI effect. DC applied field is to produce a damping in domain wall movements, which is responsible for the minus parallel RL arm in equivalent circuits. The relaxation frequency of the sample is about 12 MHz, near which the maximum GMI happens.

Original language	English
Pages (from-to)	666-670
Number of pages	5
Journal	Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices
Volume	13
Issue number	6
State	Published - Dec 2007

Keywords

Equivalent circuits
Giant magneto-impedance effect
Permeability
Relaxation frequency

Cite this

@article{381dbf9f8fc7449d852ef218fa30f147,

title = "Magnetization processes and giant magneto-impedance effect in feCuNbSiB multilayered films",

abstract = "FeCuNbSiB multilayered films are prepared by radio frequency (RF) sputtering. The as-cast sample has a maximum GMI ratio of 44.3\% at 12 MHz. Complex permeability and equivalent circuits are used to demonstrate the magnetization processes, which are relevant to GMI effect. DC applied field is to produce a damping in domain wall movements, which is responsible for the minus parallel RL arm in equivalent circuits. The relaxation frequency of the sample is about 12 MHz, near which the maximum GMI happens.",

keywords = "Equivalent circuits, Giant magneto-impedance effect, Permeability, Relaxation frequency",

author = "Hong Lin and Yuan, \{Wang Zhi\} and Zhao, \{Zhen Jie\} and Cheng, \{Jin Ke\} and Xin, \{Hong Liang\} and Wu, \{Zhi Ming\} and Ruan, \{Jian Zhong\} and Yang, \{Xie Long\}",

year = "2007",

month = dec,

language = "英语",

volume = "13",

pages = "666--670",

journal = "Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices",

issn = "1007-4252",

publisher = "Chinese Academy of Sciences",

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}

TY - JOUR

T1 - Magnetization processes and giant magneto-impedance effect in feCuNbSiB multilayered films

AU - Lin, Hong

AU - Yuan, Wang Zhi

AU - Zhao, Zhen Jie

AU - Cheng, Jin Ke

AU - Xin, Hong Liang

AU - Wu, Zhi Ming

AU - Ruan, Jian Zhong

AU - Yang, Xie Long

PY - 2007/12

Y1 - 2007/12

N2 - FeCuNbSiB multilayered films are prepared by radio frequency (RF) sputtering. The as-cast sample has a maximum GMI ratio of 44.3% at 12 MHz. Complex permeability and equivalent circuits are used to demonstrate the magnetization processes, which are relevant to GMI effect. DC applied field is to produce a damping in domain wall movements, which is responsible for the minus parallel RL arm in equivalent circuits. The relaxation frequency of the sample is about 12 MHz, near which the maximum GMI happens.

AB - FeCuNbSiB multilayered films are prepared by radio frequency (RF) sputtering. The as-cast sample has a maximum GMI ratio of 44.3% at 12 MHz. Complex permeability and equivalent circuits are used to demonstrate the magnetization processes, which are relevant to GMI effect. DC applied field is to produce a damping in domain wall movements, which is responsible for the minus parallel RL arm in equivalent circuits. The relaxation frequency of the sample is about 12 MHz, near which the maximum GMI happens.

KW - Equivalent circuits

KW - Giant magneto-impedance effect

KW - Permeability

KW - Relaxation frequency

UR - https://www.scopus.com/pages/publications/38349002676

M3 - 文章

AN - SCOPUS:38349002676

SN - 1007-4252

VL - 13

SP - 666

EP - 670

JO - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

JF - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

IS - 6

ER -

Magnetization processes and giant magneto-impedance effect in feCuNbSiB multilayered films

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Keywords

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