Magnetism induced by boron impurities in amorphous silicon

Y. Zhu; C. L. Du; D. N. Shi; K. C. Zhang; C. L. Ma; S. J. Gong; Z. Q. Yang

doi:10.1063/1.3565051

Magnetism induced by boron impurities in amorphous silicon

Y. Zhu^*
, C. L. Du
, D. N. Shi
, K. C. Zhang
, C. L. Ma
, S. J. Gong
, Z. Q. Yang

^*Corresponding author for this work

School of Physics and Electronic Science

Nanjing University of Aeronautics and Astronautics
Bohai University
Suzhou University of Science and Technology
Fudan University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

With first-principles calculations, magnetism is found in amorphous silicon doped with B impurities. The maximum magnetic moment per impurity atom is predicted to be ∼1.0 _B which originates mostly from unsaturated bond around three-fold coordinated Si atoms. Stoner criterion is employed to account for the magnetism induced by p-type impurities. The obtained spin polarized energies are around 50 meV, indicating that the magnetism found in amorphous silicon is able to survive even at room temperature.

Original language	English
Article number	073913
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3565051
State	Published - 1 Apr 2011

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title = "Magnetism induced by boron impurities in amorphous silicon",

abstract = "With first-principles calculations, magnetism is found in amorphous silicon doped with B impurities. The maximum magnetic moment per impurity atom is predicted to be ∼1.0 B which originates mostly from unsaturated bond around three-fold coordinated Si atoms. Stoner criterion is employed to account for the magnetism induced by p-type impurities. The obtained spin polarized energies are around 50 meV, indicating that the magnetism found in amorphous silicon is able to survive even at room temperature.",

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AU - Zhu, Y.

AU - Du, C. L.

AU - Shi, D. N.

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AU - Ma, C. L.

AU - Gong, S. J.

AU - Yang, Z. Q.

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N2 - With first-principles calculations, magnetism is found in amorphous silicon doped with B impurities. The maximum magnetic moment per impurity atom is predicted to be ∼1.0 B which originates mostly from unsaturated bond around three-fold coordinated Si atoms. Stoner criterion is employed to account for the magnetism induced by p-type impurities. The obtained spin polarized energies are around 50 meV, indicating that the magnetism found in amorphous silicon is able to survive even at room temperature.

AB - With first-principles calculations, magnetism is found in amorphous silicon doped with B impurities. The maximum magnetic moment per impurity atom is predicted to be ∼1.0 B which originates mostly from unsaturated bond around three-fold coordinated Si atoms. Stoner criterion is employed to account for the magnetism induced by p-type impurities. The obtained spin polarized energies are around 50 meV, indicating that the magnetism found in amorphous silicon is able to survive even at room temperature.

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DO - 10.1063/1.3565051

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Magnetism induced by boron impurities in amorphous silicon

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