Magnetic Nanodevices and Spin-Transport Properties of a Two-Dimensional Cr SCl Monolayer

The two-dimensional intrinsic ferromagnet CrSCl monolayer has considerable potential for application in the development of spintronic devices because of properties such as robust ferromagnetic ordering, large spin polarization, high Curie temperature, and high carrier mobilities. Here, we investigate the electromagnetic properties of the CrSCl monolayer and the spin-transport properties of some conceptual magnetic devices we construct, such as p-n-junction diodes, field-effect transistors, and phototransistors, by means of first-principles calculations. The results indicate that the p-n-junction diodes of the CrSCl monolayer exhibit full spin-polarized transport behavior, and both the p-n and p-i-n junctions show excellent spin-filtering behavior. The phototransistor of the CrSCl monolayer exhibits spin-resolved photoresponse characteristics for different wavelengths of light. Furthermore, it possesses the ability to generate a fully spin-up polarized current in the visible range. Our results provide key insights into the fundamental physical properties and the underlying transport and photoresponse mechanisms of the CrSCl monolayer.