Magnetic field modulated dielectric relaxation behavior of Pt/BiScO 3-PbTiO 3/La 0.7Sr 0.3MnO 3 heterostructure in metal-insulator transition region: An equivalent-circuit method

Junyu Zhu; Jing Yang; Wei Bai; Chungang Duan; Shuai Zhang; Genshui Wang; Xianlin Dong; Denis Remiens; Xiaodong Tang

doi:10.1063/1.3667289

Magnetic field modulated dielectric relaxation behavior of Pt/BiScO ₃-PbTiO ₃/La _0.7Sr _0.3MnO ₃ heterostructure in metal-insulator transition region: An equivalent-circuit method

Junyu Zhu, Jing Yang, Wei Bai, Chungang Duan, Shuai Zhang, Genshui Wang, Xianlin Dong, Denis Remiens, Xiaodong Tang

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Utilizing temperature and magnetic field dependent dielectric spectroscopy, two different dielectric relaxation processes, both accompanied with prominent positive magnetodielectric (MD) effects, were observed in Pt/BiScO ₃-PbTiO ₃/La _0.7Sr _0.3MnO ₃ (Pt/BSPT/LSMO) heterostructure. An equivalent circuit model is established to quantitatively describe the relaxation data well. The simulation results elucidated that one relaxation process can be attributed to magnetic order associated BSPT/LSMO interfacial relaxation with abnormal dynamics feature. Another one is due to the external contact interface contributions. Both relaxation dynamics can be tuned, via magnetic field controlled localization of free interfacial charges, to induce MD effects in BSPT/LSMO interfaces and nonmagnetic Pt/BSPT contacts.

Original language	English
Article number	114118
Journal	Journal of Applied Physics
Volume	110
Issue number	11
DOIs	https://doi.org/10.1063/1.3667289
State	Published - 1 Dec 2011

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title = "Magnetic field modulated dielectric relaxation behavior of Pt/BiScO 3-PbTiO 3/La 0.7Sr 0.3MnO 3 heterostructure in metal-insulator transition region: An equivalent-circuit method",

abstract = "Utilizing temperature and magnetic field dependent dielectric spectroscopy, two different dielectric relaxation processes, both accompanied with prominent positive magnetodielectric (MD) effects, were observed in Pt/BiScO 3-PbTiO 3/La 0.7Sr 0.3MnO 3 (Pt/BSPT/LSMO) heterostructure. An equivalent circuit model is established to quantitatively describe the relaxation data well. The simulation results elucidated that one relaxation process can be attributed to magnetic order associated BSPT/LSMO interfacial relaxation with abnormal dynamics feature. Another one is due to the external contact interface contributions. Both relaxation dynamics can be tuned, via magnetic field controlled localization of free interfacial charges, to induce MD effects in BSPT/LSMO interfaces and nonmagnetic Pt/BSPT contacts.",

author = "Junyu Zhu and Jing Yang and Wei Bai and Chungang Duan and Shuai Zhang and Genshui Wang and Xianlin Dong and Denis Remiens and Xiaodong Tang",

year = "2011",

month = dec,

day = "1",

doi = "10.1063/1.3667289",

language = "英语",

volume = "110",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Magnetic field modulated dielectric relaxation behavior of Pt/BiScO 3-PbTiO 3/La 0.7Sr 0.3MnO 3 heterostructure in metal-insulator transition region

T2 - An equivalent-circuit method

AU - Zhu, Junyu

AU - Yang, Jing

AU - Bai, Wei

AU - Duan, Chungang

AU - Zhang, Shuai

AU - Wang, Genshui

AU - Dong, Xianlin

AU - Remiens, Denis

AU - Tang, Xiaodong

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Utilizing temperature and magnetic field dependent dielectric spectroscopy, two different dielectric relaxation processes, both accompanied with prominent positive magnetodielectric (MD) effects, were observed in Pt/BiScO 3-PbTiO 3/La 0.7Sr 0.3MnO 3 (Pt/BSPT/LSMO) heterostructure. An equivalent circuit model is established to quantitatively describe the relaxation data well. The simulation results elucidated that one relaxation process can be attributed to magnetic order associated BSPT/LSMO interfacial relaxation with abnormal dynamics feature. Another one is due to the external contact interface contributions. Both relaxation dynamics can be tuned, via magnetic field controlled localization of free interfacial charges, to induce MD effects in BSPT/LSMO interfaces and nonmagnetic Pt/BSPT contacts.

AB - Utilizing temperature and magnetic field dependent dielectric spectroscopy, two different dielectric relaxation processes, both accompanied with prominent positive magnetodielectric (MD) effects, were observed in Pt/BiScO 3-PbTiO 3/La 0.7Sr 0.3MnO 3 (Pt/BSPT/LSMO) heterostructure. An equivalent circuit model is established to quantitatively describe the relaxation data well. The simulation results elucidated that one relaxation process can be attributed to magnetic order associated BSPT/LSMO interfacial relaxation with abnormal dynamics feature. Another one is due to the external contact interface contributions. Both relaxation dynamics can be tuned, via magnetic field controlled localization of free interfacial charges, to induce MD effects in BSPT/LSMO interfaces and nonmagnetic Pt/BSPT contacts.

UR - https://www.scopus.com/pages/publications/84859334858

U2 - 10.1063/1.3667289

DO - 10.1063/1.3667289

M3 - 文章

AN - SCOPUS:84859334858

SN - 0021-8979

VL - 110

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 114118

ER -

Magnetic field modulated dielectric relaxation behavior of Pt/BiScO ₃-PbTiO ₃/La _0.7Sr _0.3MnO ₃ heterostructure in metal-insulator transition region: An equivalent-circuit method

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