Magnetic-field-inducer carrier freeze-out in narrow-gap semiconductors analysed by capacitance spectroscopy

Kun Liu; J. H. Chu; L. J. Wu; Yi Cai; S. L. Guo; H. J. Ou; G. Z. Zheng; D. Y. Tang

doi:10.1088/0268-1242/12/4/011

Magnetic-field-inducer carrier freeze-out in narrow-gap semiconductors analysed by capacitance spectroscopy

Kun Liu^*
, J. H. Chu
, L. J. Wu
, Yi Cai
, S. L. Guo
, H. J. Ou
, G. Z. Zheng
, D. Y. Tang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Magnetocapacitance spectroscopy is introduced to study the magnetic-field-induced carrier freeze-out in narrow-gap semiconductors (NGS). By using this experimental method the magnetic-field-induced carrier freeze-out in an N-type InSb sample has been investigated at 4.2 K in a magnetic field range from 0 to 7.0 T. With increasing magnetic field between 2.0 T and 7.0 T, the activation energy of shallow donors in the sample increased from about 1.0 meV to 2.7 meV. The experimental results are compared with both theoretical and other experimental data. Good agreement is obtained between our experimental results and others, while discrepancies still exist between the experiment and theory.

Original language	English
Pages (from-to)	406-408
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	12
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/12/4/011
State	Published - Apr 1997
Externally published	Yes

Access to Document

10.1088/0268-1242/12/4/011

Cite this

@article{e12bc3998b88493995c79a004e9d6c56,

title = "Magnetic-field-inducer carrier freeze-out in narrow-gap semiconductors analysed by capacitance spectroscopy",

abstract = "Magnetocapacitance spectroscopy is introduced to study the magnetic-field-induced carrier freeze-out in narrow-gap semiconductors (NGS). By using this experimental method the magnetic-field-induced carrier freeze-out in an N-type InSb sample has been investigated at 4.2 K in a magnetic field range from 0 to 7.0 T. With increasing magnetic field between 2.0 T and 7.0 T, the activation energy of shallow donors in the sample increased from about 1.0 meV to 2.7 meV. The experimental results are compared with both theoretical and other experimental data. Good agreement is obtained between our experimental results and others, while discrepancies still exist between the experiment and theory.",

author = "Kun Liu and Chu, \{J. H.\} and Wu, \{L. J.\} and Yi Cai and Guo, \{S. L.\} and Ou, \{H. J.\} and Zheng, \{G. Z.\} and Tang, \{D. Y.\}",

year = "1997",

month = apr,

doi = "10.1088/0268-1242/12/4/011",

language = "英语",

volume = "12",

pages = "406--408",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "4",

}

TY - JOUR

T1 - Magnetic-field-inducer carrier freeze-out in narrow-gap semiconductors analysed by capacitance spectroscopy

AU - Liu, Kun

AU - Chu, J. H.

AU - Wu, L. J.

AU - Cai, Yi

AU - Guo, S. L.

AU - Ou, H. J.

AU - Zheng, G. Z.

AU - Tang, D. Y.

PY - 1997/4

Y1 - 1997/4

N2 - Magnetocapacitance spectroscopy is introduced to study the magnetic-field-induced carrier freeze-out in narrow-gap semiconductors (NGS). By using this experimental method the magnetic-field-induced carrier freeze-out in an N-type InSb sample has been investigated at 4.2 K in a magnetic field range from 0 to 7.0 T. With increasing magnetic field between 2.0 T and 7.0 T, the activation energy of shallow donors in the sample increased from about 1.0 meV to 2.7 meV. The experimental results are compared with both theoretical and other experimental data. Good agreement is obtained between our experimental results and others, while discrepancies still exist between the experiment and theory.

AB - Magnetocapacitance spectroscopy is introduced to study the magnetic-field-induced carrier freeze-out in narrow-gap semiconductors (NGS). By using this experimental method the magnetic-field-induced carrier freeze-out in an N-type InSb sample has been investigated at 4.2 K in a magnetic field range from 0 to 7.0 T. With increasing magnetic field between 2.0 T and 7.0 T, the activation energy of shallow donors in the sample increased from about 1.0 meV to 2.7 meV. The experimental results are compared with both theoretical and other experimental data. Good agreement is obtained between our experimental results and others, while discrepancies still exist between the experiment and theory.

UR - https://www.scopus.com/pages/publications/0031124315

U2 - 10.1088/0268-1242/12/4/011

DO - 10.1088/0268-1242/12/4/011

M3 - 文章

AN - SCOPUS:0031124315

SN - 0268-1242

VL - 12

SP - 406

EP - 408

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4

ER -

Magnetic-field-inducer carrier freeze-out in narrow-gap semiconductors analysed by capacitance spectroscopy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this