Magnetic and optical properties of Cr+-implanted GaN

Jiqing Wang; Pingping Chen; Xuguang Guo; Zhifeng Li; Wei Lu

doi:10.1016/j.jcrysgro.2004.12.005

Magnetic and optical properties of Cr⁺-implanted GaN

Jiqing Wang^*
, Pingping Chen
, Xuguang Guo
, Zhifeng Li
, Wei Lu

^*Corresponding author for this work

School of Physics and Electronic Science

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In this paper, we report the fabrication of ferromagnetic semiconductor on GaN substrates by high-dose Cr ion implantation. Both magnetic and optical properties for Cr⁺-implanted GaN were studied by photoluminescence and superconducting quantum interference device. The results of photoluminescence reveal that the implanted chromium incorporates substitutionally on Ga site and forms deep acceptor level in GaN. The materials show ferromagnetic-like order up to 300 K as indicated by temperature-dependent magnetization measurement. The M vs.T curve also implies the presence of different components to the magnetization in Cr⁺-implanted GaN.

Original language	English
Pages (from-to)	393-397
Number of pages	5
Journal	Journal of Crystal Growth
Volume	275
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.12.005
State	Published - 1 Mar 2005

Keywords

A1. Ion implantation
B2. Diluted magnetic semiconductors
B2. Ferromagnetism

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10.1016/j.jcrysgro.2004.12.005

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title = "Magnetic and optical properties of Cr+-implanted GaN",

abstract = "In this paper, we report the fabrication of ferromagnetic semiconductor on GaN substrates by high-dose Cr ion implantation. Both magnetic and optical properties for Cr+-implanted GaN were studied by photoluminescence and superconducting quantum interference device. The results of photoluminescence reveal that the implanted chromium incorporates substitutionally on Ga site and forms deep acceptor level in GaN. The materials show ferromagnetic-like order up to 300 K as indicated by temperature-dependent magnetization measurement. The M vs.T curve also implies the presence of different components to the magnetization in Cr+-implanted GaN.",

keywords = "A1. Ion implantation, B2. Diluted magnetic semiconductors, B2. Ferromagnetism",

author = "Jiqing Wang and Pingping Chen and Xuguang Guo and Zhifeng Li and Wei Lu",

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day = "1",

doi = "10.1016/j.jcrysgro.2004.12.005",

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journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Magnetic and optical properties of Cr+-implanted GaN

AU - Wang, Jiqing

AU - Chen, Pingping

AU - Guo, Xuguang

AU - Li, Zhifeng

AU - Lu, Wei

PY - 2005/3/1

Y1 - 2005/3/1

N2 - In this paper, we report the fabrication of ferromagnetic semiconductor on GaN substrates by high-dose Cr ion implantation. Both magnetic and optical properties for Cr+-implanted GaN were studied by photoluminescence and superconducting quantum interference device. The results of photoluminescence reveal that the implanted chromium incorporates substitutionally on Ga site and forms deep acceptor level in GaN. The materials show ferromagnetic-like order up to 300 K as indicated by temperature-dependent magnetization measurement. The M vs.T curve also implies the presence of different components to the magnetization in Cr+-implanted GaN.

AB - In this paper, we report the fabrication of ferromagnetic semiconductor on GaN substrates by high-dose Cr ion implantation. Both magnetic and optical properties for Cr+-implanted GaN were studied by photoluminescence and superconducting quantum interference device. The results of photoluminescence reveal that the implanted chromium incorporates substitutionally on Ga site and forms deep acceptor level in GaN. The materials show ferromagnetic-like order up to 300 K as indicated by temperature-dependent magnetization measurement. The M vs.T curve also implies the presence of different components to the magnetization in Cr+-implanted GaN.

KW - A1. Ion implantation

KW - B2. Diluted magnetic semiconductors

KW - B2. Ferromagnetism

UR - https://www.scopus.com/pages/publications/14844345637

U2 - 10.1016/j.jcrysgro.2004.12.005

DO - 10.1016/j.jcrysgro.2004.12.005

M3 - 文章

AN - SCOPUS:14844345637

SN - 0022-0248

VL - 275

SP - 393

EP - 397

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Magnetic and optical properties of Cr⁺-implanted GaN

Abstract

Keywords

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