LPE growth and characterization of mid-infrared InAs0.85Sb 0.15 film on InAs substrate

Q. W. Wang; C. H. Sun; S. H. Hu; J. Y. He; J. Wu; X. Chen; H. Y. Deng; N. Dai

doi:10.1016/j.jcrysgro.2011.05.007

LPE growth and characterization of mid-infrared InAs_0.85Sb _0.15 film on InAs substrate

Q. W. Wang
, C. H. Sun
, S. H. Hu
, J. Y. He
, J. Wu
, X. Chen
, H. Y. Deng^*
, N. Dai

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

High quality InAs_0.85Sb_0.15 film has been successfully grown on (1 0 0) InAs substrate by liquid phase epitaxy using InAs_0.93Sb_0.07 buffer layer. The microstructure and morphologies of the film were characterized by high-resolution X-ray diffraction, scanning electronic microscopy, optical microscopy, atomic force microscopy, and high-resolution transmission electron microscopy. These results show that the high quality film with mirror-like surface was obtained. The optical properties were investigated by photoluminescence and the Raman spectra. The peak position of photoluminescence spectrum for the film is about 0.35 eV at 77 K. In addition to the reported single-mode phonon behavior, the local vibration mode associated with Sb atoms was also observed in the Raman spectra.

Original language	English
Pages (from-to)	63-67
Number of pages	5
Journal	Journal of Crystal Growth
Volume	327
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.05.007
State	Published - 15 Jul 2011
Externally published	Yes

Keywords

A1. X-ray diffraction
A3. Liquid phase epitaxy
B2. Semiconducting IIIV materials
B3. Infrared devices

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10.1016/j.jcrysgro.2011.05.007

Cite this

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title = "LPE growth and characterization of mid-infrared InAs0.85Sb 0.15 film on InAs substrate",

abstract = "High quality InAs0.85Sb0.15 film has been successfully grown on (1 0 0) InAs substrate by liquid phase epitaxy using InAs0.93Sb0.07 buffer layer. The microstructure and morphologies of the film were characterized by high-resolution X-ray diffraction, scanning electronic microscopy, optical microscopy, atomic force microscopy, and high-resolution transmission electron microscopy. These results show that the high quality film with mirror-like surface was obtained. The optical properties were investigated by photoluminescence and the Raman spectra. The peak position of photoluminescence spectrum for the film is about 0.35 eV at 77 K. In addition to the reported single-mode phonon behavior, the local vibration mode associated with Sb atoms was also observed in the Raman spectra.",

keywords = "A1. X-ray diffraction, A3. Liquid phase epitaxy, B2. Semiconducting IIIV materials, B3. Infrared devices",

author = "Wang, \{Q. W.\} and Sun, \{C. H.\} and Hu, \{S. H.\} and He, \{J. Y.\} and J. Wu and X. Chen and Deng, \{H. Y.\} and N. Dai",

year = "2011",

month = jul,

day = "15",

doi = "10.1016/j.jcrysgro.2011.05.007",

language = "英语",

volume = "327",

pages = "63--67",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1",

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TY - JOUR

T1 - LPE growth and characterization of mid-infrared InAs0.85Sb 0.15 film on InAs substrate

AU - Wang, Q. W.

AU - Sun, C. H.

AU - Hu, S. H.

AU - He, J. Y.

AU - Wu, J.

AU - Chen, X.

AU - Deng, H. Y.

AU - Dai, N.

PY - 2011/7/15

Y1 - 2011/7/15

N2 - High quality InAs0.85Sb0.15 film has been successfully grown on (1 0 0) InAs substrate by liquid phase epitaxy using InAs0.93Sb0.07 buffer layer. The microstructure and morphologies of the film were characterized by high-resolution X-ray diffraction, scanning electronic microscopy, optical microscopy, atomic force microscopy, and high-resolution transmission electron microscopy. These results show that the high quality film with mirror-like surface was obtained. The optical properties were investigated by photoluminescence and the Raman spectra. The peak position of photoluminescence spectrum for the film is about 0.35 eV at 77 K. In addition to the reported single-mode phonon behavior, the local vibration mode associated with Sb atoms was also observed in the Raman spectra.

AB - High quality InAs0.85Sb0.15 film has been successfully grown on (1 0 0) InAs substrate by liquid phase epitaxy using InAs0.93Sb0.07 buffer layer. The microstructure and morphologies of the film were characterized by high-resolution X-ray diffraction, scanning electronic microscopy, optical microscopy, atomic force microscopy, and high-resolution transmission electron microscopy. These results show that the high quality film with mirror-like surface was obtained. The optical properties were investigated by photoluminescence and the Raman spectra. The peak position of photoluminescence spectrum for the film is about 0.35 eV at 77 K. In addition to the reported single-mode phonon behavior, the local vibration mode associated with Sb atoms was also observed in the Raman spectra.

KW - A1. X-ray diffraction

KW - A3. Liquid phase epitaxy

KW - B2. Semiconducting IIIV materials

KW - B3. Infrared devices

UR - https://www.scopus.com/pages/publications/79960155026

U2 - 10.1016/j.jcrysgro.2011.05.007

DO - 10.1016/j.jcrysgro.2011.05.007

M3 - 文章

AN - SCOPUS:79960155026

SN - 0022-0248

VL - 327

SP - 63

EP - 67

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

LPE growth and characterization of mid-infrared InAs_0.85Sb _0.15 film on InAs substrate

Abstract

Keywords

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