TY - JOUR
T1 - Low-temperature processing of high-performance 0.74Pb(Mg 1/3Nb 2/3)O 3-0.26PbTiO 3 thin films on La 0.6Sr 0.4CoO 3-buffered Si substrates for pyroelectric arrays applications
AU - Tang, Yanxue
AU - Zhou, Dan
AU - Tian, Yue
AU - Li, Xia
AU - Wang, Feifei
AU - Sun, Dazhi
AU - Shi, Wangzhou
AU - Tian, Li
AU - Sun, Jinglan
AU - Meng, Xiangjian
AU - Chu, Junhao
PY - 2012/4
Y1 - 2012/4
N2 - To prepare high-performance ferroelectric thin films on Si substrates for pyroelectric arrays applications, 0.74Pb(Mg 1/3Nb 2/3)O 3-0.26PbTiO 3 (PMN-PT) thin films, with composition beyond morphotropic phase boundary, were deposited by radio-frequency magnetron sputtering. Conductive perovskite La 0.6Sr 0.4CoO 3 with resistivity of about 20 μΩ cm was used as a buffer layer between PMN-PT and Pt/Ti/SiO 2/Si substrates to promote perovskite phase formation for the PMN-PT thin films. The PMN-PT thin films with pure perovskite phase have been obtained at temperatures as low as 500°C, which is compatible with integrated circuits. The ferroelectric, dielectric, and pyroelectric properties of the films were investigated. It is found that the films exhibit a large remnant polarization of 29.2 μC/cm 2 and a high pyroelectric coefficient of 9.4 × 10 -4 C/m 2 K at room temperature. The calculated figures of merit for current responsivity, voltage responsivity, and detectivity are 3.76 × 10 -10m/V, 0.02 m 2/C, and 1.29 × 10 -5 Pa -1/2, respectively. These features suggest the film a promising material for thermal imaging applications based on silicon technology.
AB - To prepare high-performance ferroelectric thin films on Si substrates for pyroelectric arrays applications, 0.74Pb(Mg 1/3Nb 2/3)O 3-0.26PbTiO 3 (PMN-PT) thin films, with composition beyond morphotropic phase boundary, were deposited by radio-frequency magnetron sputtering. Conductive perovskite La 0.6Sr 0.4CoO 3 with resistivity of about 20 μΩ cm was used as a buffer layer between PMN-PT and Pt/Ti/SiO 2/Si substrates to promote perovskite phase formation for the PMN-PT thin films. The PMN-PT thin films with pure perovskite phase have been obtained at temperatures as low as 500°C, which is compatible with integrated circuits. The ferroelectric, dielectric, and pyroelectric properties of the films were investigated. It is found that the films exhibit a large remnant polarization of 29.2 μC/cm 2 and a high pyroelectric coefficient of 9.4 × 10 -4 C/m 2 K at room temperature. The calculated figures of merit for current responsivity, voltage responsivity, and detectivity are 3.76 × 10 -10m/V, 0.02 m 2/C, and 1.29 × 10 -5 Pa -1/2, respectively. These features suggest the film a promising material for thermal imaging applications based on silicon technology.
UR - https://www.scopus.com/pages/publications/84859651020
U2 - 10.1111/j.1551-2916.2011.04976.x
DO - 10.1111/j.1551-2916.2011.04976.x
M3 - 文章
AN - SCOPUS:84859651020
SN - 0002-7820
VL - 95
SP - 1367
EP - 1371
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
IS - 4
ER -