Low-temperature preparation of Pb(ZrxTi1-x)O 3 thin film

X. D. Zhang; X. J. Meng; J. L. Sun; G. S. Wang; T. Lin; J. H. Chu

doi:10.1080/10584580600660132

Low-temperature preparation of Pb(Zr_xTi_1-x)O ₃ thin film

X. D. Zhang^*
, X. J. Meng
, J. L. Sun
, G. S. Wang
, T. Lin
, J. H. Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

An innovative high oxygen-pressure processing (HOPP) was developed. By HOPP for 10 hours, the spin-eoated PZT 50/50 thin film was successfully crystallized and highly (100) oriented PZT thin film was obtained at temperature as low as 400°C. This noval HOPP is compatible to the ferroelectric PZT film integration with readout integrated chip. The PZT 50/50 thin film by HOPP showed a well-saturated hysteresis loop at an applied electric field of 367 kV/cm with P r and E c of 45 C/cm 2 and 121 kV/cm, respectively. The large values of P r and E c result from large leakage.

Original language	English
Pages (from-to)	123-128
Number of pages	6
Journal	Integrated Ferroelectrics
Volume	81
Issue number	1
DOIs	https://doi.org/10.1080/10584580600660132
State	Published - 1 Nov 2006
Externally published	Yes

Keywords

Critical nucleation energy
Ferroelectric PZT film
High oxygen-pressure processing (HOPP)
Low-temperature
Sol-gel
Sputter

Access to Document

10.1080/10584580600660132

Cite this

@article{e4ef332b6f394dccac3f48918ed56f68,

title = "Low-temperature preparation of Pb(ZrxTi1-x)O 3 thin film",

abstract = "An innovative high oxygen-pressure processing (HOPP) was developed. By HOPP for 10 hours, the spin-eoated PZT 50/50 thin film was successfully crystallized and highly (100) oriented PZT thin film was obtained at temperature as low as 400°C. This noval HOPP is compatible to the ferroelectric PZT film integration with readout integrated chip. The PZT 50/50 thin film by HOPP showed a well-saturated hysteresis loop at an applied electric field of 367 kV/cm with P r and E c of 45 C/cm 2 and 121 kV/cm, respectively. The large values of P r and E c result from large leakage.",

keywords = "Critical nucleation energy, Ferroelectric PZT film, High oxygen-pressure processing (HOPP), Low-temperature, Sol-gel, Sputter",

author = "Zhang, \{X. D.\} and Meng, \{X. J.\} and Sun, \{J. L.\} and Wang, \{G. S.\} and T. Lin and Chu, \{J. H.\}",

year = "2006",

month = nov,

day = "1",

doi = "10.1080/10584580600660132",

language = "英语",

volume = "81",

pages = "123--128",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1",

}

TY - JOUR

T1 - Low-temperature preparation of Pb(ZrxTi1-x)O 3 thin film

AU - Zhang, X. D.

AU - Meng, X. J.

AU - Sun, J. L.

AU - Wang, G. S.

AU - Lin, T.

AU - Chu, J. H.

PY - 2006/11/1

Y1 - 2006/11/1

N2 - An innovative high oxygen-pressure processing (HOPP) was developed. By HOPP for 10 hours, the spin-eoated PZT 50/50 thin film was successfully crystallized and highly (100) oriented PZT thin film was obtained at temperature as low as 400°C. This noval HOPP is compatible to the ferroelectric PZT film integration with readout integrated chip. The PZT 50/50 thin film by HOPP showed a well-saturated hysteresis loop at an applied electric field of 367 kV/cm with P r and E c of 45 C/cm 2 and 121 kV/cm, respectively. The large values of P r and E c result from large leakage.

AB - An innovative high oxygen-pressure processing (HOPP) was developed. By HOPP for 10 hours, the spin-eoated PZT 50/50 thin film was successfully crystallized and highly (100) oriented PZT thin film was obtained at temperature as low as 400°C. This noval HOPP is compatible to the ferroelectric PZT film integration with readout integrated chip. The PZT 50/50 thin film by HOPP showed a well-saturated hysteresis loop at an applied electric field of 367 kV/cm with P r and E c of 45 C/cm 2 and 121 kV/cm, respectively. The large values of P r and E c result from large leakage.

KW - Critical nucleation energy

KW - Ferroelectric PZT film

KW - High oxygen-pressure processing (HOPP)

KW - Low-temperature

KW - Sol-gel

KW - Sputter

UR - https://www.scopus.com/pages/publications/33745840188

U2 - 10.1080/10584580600660132

DO - 10.1080/10584580600660132

M3 - 文章

AN - SCOPUS:33745840188

SN - 1058-4587

VL - 81

SP - 123

EP - 128

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1

ER -

Low-temperature preparation of Pb(Zr_xTi_1-x)O ₃ thin film

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this