Low-temperature preparation of highly (100)-oriented Pb(Zr xTi1-x)O3 thin film by high oxygen-pressure processing

X. D. Zhang; X. J. Meng; J. L. Sun; T. Lin; J. H. Chu

doi:10.1063/1.1952567

Low-temperature preparation of highly (100)-oriented Pb(Zr _xTi_1-x)O₃ thin film by high oxygen-pressure processing

X. D. Zhang^*
, X. J. Meng
, J. L. Sun
, T. Lin
, J. H. Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

A method for thin-film fabrication employing high oxygen-pressure processing (HOPP) was developed. With this method, the highly (100) oriented Pb(Zr_xTi1_1-x)O₃ (PZT) thin film was fabricated at temperature as low as 400°C. HOPP is compatible to the ferroelectric PZT film integration with a readout integrated circuit. The sol-gel-derived PZT 50/50 thin film showed a well-saturated hysteresis loop at an applied electric field of 367 kV/cm with P_r and E_c of 45 μC/cm ² and 121 kV/cm, respectively. Large electric leakage was attributed to remnant organic components, which was demonstrated by sputtered organic-free PZT films. The optimized P_r and E_c are of 26 μC/cm ² and 93 kV/cm under an applied electric field of 400 kV/cm.

Original language	English
Article number	252902
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	25
DOIs	https://doi.org/10.1063/1.1952567
State	Published - 2005
Externally published	Yes

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title = "Low-temperature preparation of highly (100)-oriented Pb(Zr xTi1-x)O3 thin film by high oxygen-pressure processing",

abstract = "A method for thin-film fabrication employing high oxygen-pressure processing (HOPP) was developed. With this method, the highly (100) oriented Pb(ZrxTi11-x)O3 (PZT) thin film was fabricated at temperature as low as 400°C. HOPP is compatible to the ferroelectric PZT film integration with a readout integrated circuit. The sol-gel-derived PZT 50/50 thin film showed a well-saturated hysteresis loop at an applied electric field of 367 kV/cm with Pr and Ec of 45 μC/cm 2 and 121 kV/cm, respectively. Large electric leakage was attributed to remnant organic components, which was demonstrated by sputtered organic-free PZT films. The optimized Pr and Ec are of 26 μC/cm 2 and 93 kV/cm under an applied electric field of 400 kV/cm.",

author = "Zhang, \{X. D.\} and Meng, \{X. J.\} and Sun, \{J. L.\} and T. Lin and Chu, \{J. H.\}",

year = "2005",

doi = "10.1063/1.1952567",

language = "英语",

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pages = "1--3",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Low-temperature preparation of highly (100)-oriented Pb(Zr xTi1-x)O3 thin film by high oxygen-pressure processing

AU - Zhang, X. D.

AU - Meng, X. J.

AU - Sun, J. L.

AU - Lin, T.

AU - Chu, J. H.

PY - 2005

Y1 - 2005

N2 - A method for thin-film fabrication employing high oxygen-pressure processing (HOPP) was developed. With this method, the highly (100) oriented Pb(ZrxTi11-x)O3 (PZT) thin film was fabricated at temperature as low as 400°C. HOPP is compatible to the ferroelectric PZT film integration with a readout integrated circuit. The sol-gel-derived PZT 50/50 thin film showed a well-saturated hysteresis loop at an applied electric field of 367 kV/cm with Pr and Ec of 45 μC/cm 2 and 121 kV/cm, respectively. Large electric leakage was attributed to remnant organic components, which was demonstrated by sputtered organic-free PZT films. The optimized Pr and Ec are of 26 μC/cm 2 and 93 kV/cm under an applied electric field of 400 kV/cm.

AB - A method for thin-film fabrication employing high oxygen-pressure processing (HOPP) was developed. With this method, the highly (100) oriented Pb(ZrxTi11-x)O3 (PZT) thin film was fabricated at temperature as low as 400°C. HOPP is compatible to the ferroelectric PZT film integration with a readout integrated circuit. The sol-gel-derived PZT 50/50 thin film showed a well-saturated hysteresis loop at an applied electric field of 367 kV/cm with Pr and Ec of 45 μC/cm 2 and 121 kV/cm, respectively. Large electric leakage was attributed to remnant organic components, which was demonstrated by sputtered organic-free PZT films. The optimized Pr and Ec are of 26 μC/cm 2 and 93 kV/cm under an applied electric field of 400 kV/cm.

UR - https://www.scopus.com/pages/publications/24344470227

U2 - 10.1063/1.1952567

DO - 10.1063/1.1952567

M3 - 文章

AN - SCOPUS:24344470227

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252902

ER -

Low-temperature preparation of highly (100)-oriented Pb(Zr _xTi_1-x)O₃ thin film by high oxygen-pressure processing

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