Low-temperature preparation of highly (1 1 1) oriented PZT thin films by a modified sol-gel technique

X. J. Meng; J. G. Cheng; B. Li; S. L. Guo; H. J. Ye; J. H. Chu

doi:10.1016/S0022-0248(99)00420-0

Low-temperature preparation of highly (1 1 1) oriented PZT thin films by a modified sol-gel technique

X. J. Meng^*
, J. G. Cheng
, B. Li
, S. L. Guo
, H. J. Ye
, J. H. Chu

^*Corresponding author for this work

Shanghai Institute of Technology

Research output: Contribution to journal › Article › peer-review

61 Scopus citations

Abstract

A modified sol-gel technique has been developed for the preparation of PZT thin films on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates. The technique uses zirconium nitrate to substitute for the conventional Zr-alkoxides, which enhances the stability of the precursor solution and simplifies the sol-gel processing significantly. Using a modified precursor solution and rapid thermal annealing (RTA) process, highly (1 1 1) oriented PbZr_0.5Ti_0.5O₃ (PZT 50/50) thin films are obtained even at a low annealing temperature of 550 °C. The low-temperature processing is assisted by a layer-by-layer annealing method. The PZT 50/50 thin film annealed at 550 °C showed a well-saturated hysteresis loop at an applied electric field of 200 kV/cm with P_r and E_c of 11 μC/cm² and 45 kV/cm, respectively. The dielectric constant and dielectric loss of the film are 520 and 0.023, respectively.

Original language	English
Pages (from-to)	541-545
Number of pages	5
Journal	Journal of Crystal Growth
Volume	208
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(99)00420-0
State	Published - 1 Jan 2000
Externally published	Yes

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@article{17725d7556d943e3936b8ac515c752f3,

title = "Low-temperature preparation of highly (1 1 1) oriented PZT thin films by a modified sol-gel technique",

abstract = "A modified sol-gel technique has been developed for the preparation of PZT thin films on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates. The technique uses zirconium nitrate to substitute for the conventional Zr-alkoxides, which enhances the stability of the precursor solution and simplifies the sol-gel processing significantly. Using a modified precursor solution and rapid thermal annealing (RTA) process, highly (1 1 1) oriented PbZr0.5Ti0.5O3 (PZT 50/50) thin films are obtained even at a low annealing temperature of 550 °C. The low-temperature processing is assisted by a layer-by-layer annealing method. The PZT 50/50 thin film annealed at 550 °C showed a well-saturated hysteresis loop at an applied electric field of 200 kV/cm with Pr and Ec of 11 μC/cm2 and 45 kV/cm, respectively. The dielectric constant and dielectric loss of the film are 520 and 0.023, respectively.",

author = "Meng, \{X. J.\} and Cheng, \{J. G.\} and B. Li and Guo, \{S. L.\} and Ye, \{H. J.\} and Chu, \{J. H.\}",

year = "2000",

month = jan,

day = "1",

doi = "10.1016/S0022-0248(99)00420-0",

language = "英语",

volume = "208",

pages = "541--545",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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T1 - Low-temperature preparation of highly (1 1 1) oriented PZT thin films by a modified sol-gel technique

AU - Meng, X. J.

AU - Cheng, J. G.

AU - Li, B.

AU - Guo, S. L.

AU - Ye, H. J.

AU - Chu, J. H.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - A modified sol-gel technique has been developed for the preparation of PZT thin films on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates. The technique uses zirconium nitrate to substitute for the conventional Zr-alkoxides, which enhances the stability of the precursor solution and simplifies the sol-gel processing significantly. Using a modified precursor solution and rapid thermal annealing (RTA) process, highly (1 1 1) oriented PbZr0.5Ti0.5O3 (PZT 50/50) thin films are obtained even at a low annealing temperature of 550 °C. The low-temperature processing is assisted by a layer-by-layer annealing method. The PZT 50/50 thin film annealed at 550 °C showed a well-saturated hysteresis loop at an applied electric field of 200 kV/cm with Pr and Ec of 11 μC/cm2 and 45 kV/cm, respectively. The dielectric constant and dielectric loss of the film are 520 and 0.023, respectively.

AB - A modified sol-gel technique has been developed for the preparation of PZT thin films on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates. The technique uses zirconium nitrate to substitute for the conventional Zr-alkoxides, which enhances the stability of the precursor solution and simplifies the sol-gel processing significantly. Using a modified precursor solution and rapid thermal annealing (RTA) process, highly (1 1 1) oriented PbZr0.5Ti0.5O3 (PZT 50/50) thin films are obtained even at a low annealing temperature of 550 °C. The low-temperature processing is assisted by a layer-by-layer annealing method. The PZT 50/50 thin film annealed at 550 °C showed a well-saturated hysteresis loop at an applied electric field of 200 kV/cm with Pr and Ec of 11 μC/cm2 and 45 kV/cm, respectively. The dielectric constant and dielectric loss of the film are 520 and 0.023, respectively.

UR - https://www.scopus.com/pages/publications/0033883247

U2 - 10.1016/S0022-0248(99)00420-0

DO - 10.1016/S0022-0248(99)00420-0

M3 - 文章

AN - SCOPUS:0033883247

SN - 0022-0248

VL - 208

SP - 541

EP - 545

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Low-temperature preparation of highly (1 1 1) oriented PZT thin films by a modified sol-gel technique

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