Low temperature growth of manganese cobalt nickelate films by chemical deposition

Yujian Ge; Zhiming Huang; Yun Hou; Jianhuan Qin; Tianxin Li; Junhao Chu

doi:10.1016/j.tsf.2007.10.059

Low temperature growth of manganese cobalt nickelate films by chemical deposition

Yujian Ge^*
, Zhiming Huang
, Yun Hou
, Jianhuan Qin
, Tianxin Li
, Junhao Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Manganese cobalt nickelate films (Mn_xCo_yNi_{3 - x - y})O₄ (MCN) were prepared by chemical deposition method at a crystallization temperature of 600 °C, which is lower than the usual sintering temperature of ∼ 1050-1200 °C. The grain size of the MCN films increased from 20 to 60 nm with the annealing temperature increased from 600 °C to 900 °C. The secondary ion mass spectroscopy (SIMS) shows that elements of Mn, Co, Ni in the films were distributed homogenuously and that the diffusion of Si at the interface was negligeable. The infrared optical constants of the MCN thin films were determined using infrared spectroscopic ellipsometry.

Original language	English
Pages (from-to)	5931-5934
Number of pages	4
Journal	Thin Solid Films
Volume	516
Issue number	18
DOIs	https://doi.org/10.1016/j.tsf.2007.10.059
State	Published - 31 Jul 2008
Externally published	Yes

Keywords

Atomic force microscopy
Infrared spectroscopic ellipsometry
Manganese cobalt nickelate film
X-ray diffraction

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10.1016/j.tsf.2007.10.059

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title = "Low temperature growth of manganese cobalt nickelate films by chemical deposition",

abstract = "Manganese cobalt nickelate films (MnxCoyNi3 - x - y)O4 (MCN) were prepared by chemical deposition method at a crystallization temperature of 600 °C, which is lower than the usual sintering temperature of ∼ 1050-1200 °C. The grain size of the MCN films increased from 20 to 60 nm with the annealing temperature increased from 600 °C to 900 °C. The secondary ion mass spectroscopy (SIMS) shows that elements of Mn, Co, Ni in the films were distributed homogenuously and that the diffusion of Si at the interface was negligeable. The infrared optical constants of the MCN thin films were determined using infrared spectroscopic ellipsometry.",

keywords = "Atomic force microscopy, Infrared spectroscopic ellipsometry, Manganese cobalt nickelate film, X-ray diffraction",

author = "Yujian Ge and Zhiming Huang and Yun Hou and Jianhuan Qin and Tianxin Li and Junhao Chu",

year = "2008",

month = jul,

day = "31",

doi = "10.1016/j.tsf.2007.10.059",

language = "英语",

volume = "516",

pages = "5931--5934",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Low temperature growth of manganese cobalt nickelate films by chemical deposition

AU - Ge, Yujian

AU - Huang, Zhiming

AU - Hou, Yun

AU - Qin, Jianhuan

AU - Li, Tianxin

AU - Chu, Junhao

PY - 2008/7/31

Y1 - 2008/7/31

N2 - Manganese cobalt nickelate films (MnxCoyNi3 - x - y)O4 (MCN) were prepared by chemical deposition method at a crystallization temperature of 600 °C, which is lower than the usual sintering temperature of ∼ 1050-1200 °C. The grain size of the MCN films increased from 20 to 60 nm with the annealing temperature increased from 600 °C to 900 °C. The secondary ion mass spectroscopy (SIMS) shows that elements of Mn, Co, Ni in the films were distributed homogenuously and that the diffusion of Si at the interface was negligeable. The infrared optical constants of the MCN thin films were determined using infrared spectroscopic ellipsometry.

AB - Manganese cobalt nickelate films (MnxCoyNi3 - x - y)O4 (MCN) were prepared by chemical deposition method at a crystallization temperature of 600 °C, which is lower than the usual sintering temperature of ∼ 1050-1200 °C. The grain size of the MCN films increased from 20 to 60 nm with the annealing temperature increased from 600 °C to 900 °C. The secondary ion mass spectroscopy (SIMS) shows that elements of Mn, Co, Ni in the films were distributed homogenuously and that the diffusion of Si at the interface was negligeable. The infrared optical constants of the MCN thin films were determined using infrared spectroscopic ellipsometry.

KW - Atomic force microscopy

KW - Infrared spectroscopic ellipsometry

KW - Manganese cobalt nickelate film

KW - X-ray diffraction

UR - https://www.scopus.com/pages/publications/44649110180

U2 - 10.1016/j.tsf.2007.10.059

DO - 10.1016/j.tsf.2007.10.059

M3 - 文章

AN - SCOPUS:44649110180

SN - 0040-6090

VL - 516

SP - 5931

EP - 5934

JO - Thin Solid Films

JF - Thin Solid Films

IS - 18

ER -

Low temperature growth of manganese cobalt nickelate films by chemical deposition

Abstract

Keywords

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