Low temperature electrical transport properties of F-doped SnO2 films

K. H. Gao; T. Lin; X. D. Liu; X. H. Zhang; X. N. Li; J. Wu; Y. F. Liu; X. F. Wang; Y. W. Chen; B. Ni; N. Dai; J. H. Chu

doi:10.1016/j.ssc.2012.12.024

Low temperature electrical transport properties of F-doped SnO₂ films

K. H. Gao^*
, T. Lin
, X. D. Liu
, X. H. Zhang
, X. N. Li
, J. Wu
, Y. F. Liu
, X. F. Wang
, Y. W. Chen
, B. Ni
, N. Dai
, J. H. Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We study the electrical transport properties of F-doped SnO₂ thin films in a temperature range from 12 to 300 K. Two samples exhibit metallic characteristics in high temperature ranges, where the phonon-dominated scattering is the main conduction mechanism. In the low temperature range below 60 K, the negative magnetoresistivity resulting from the weak localization effect is observed. Applying weak-localization theory, we have obtained the inelastic scattering time. The obtained inelastic scattering time is proportional to T^-3, indicating that the electron-phonon interaction is main dephasing mechanism for electrons.

Original language	English
Pages (from-to)	49-53
Number of pages	5
Journal	Solid State Communications
Volume	157
DOIs	https://doi.org/10.1016/j.ssc.2012.12.024
State	Published - Mar 2013

Keywords

A. F-doped SnO
D. Electron dephasing mechanism
D. Phonon-dominated scattering
D. Weak localization effect

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10.1016/j.ssc.2012.12.024

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title = "Low temperature electrical transport properties of F-doped SnO2 films",

abstract = "We study the electrical transport properties of F-doped SnO2 thin films in a temperature range from 12 to 300 K. Two samples exhibit metallic characteristics in high temperature ranges, where the phonon-dominated scattering is the main conduction mechanism. In the low temperature range below 60 K, the negative magnetoresistivity resulting from the weak localization effect is observed. Applying weak-localization theory, we have obtained the inelastic scattering time. The obtained inelastic scattering time is proportional to T-3, indicating that the electron-phonon interaction is main dephasing mechanism for electrons.",

keywords = "A. F-doped SnO, D. Electron dephasing mechanism, D. Phonon-dominated scattering, D. Weak localization effect",

author = "Gao, \{K. H.\} and T. Lin and Liu, \{X. D.\} and Zhang, \{X. H.\} and Li, \{X. N.\} and J. Wu and Liu, \{Y. F.\} and Wang, \{X. F.\} and Chen, \{Y. W.\} and B. Ni and N. Dai and Chu, \{J. H.\}",

year = "2013",

month = mar,

doi = "10.1016/j.ssc.2012.12.024",

language = "英语",

volume = "157",

pages = "49--53",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Low temperature electrical transport properties of F-doped SnO2 films

AU - Gao, K. H.

AU - Lin, T.

AU - Liu, X. D.

AU - Zhang, X. H.

AU - Li, X. N.

AU - Wu, J.

AU - Liu, Y. F.

AU - Wang, X. F.

AU - Chen, Y. W.

AU - Ni, B.

AU - Dai, N.

AU - Chu, J. H.

PY - 2013/3

Y1 - 2013/3

N2 - We study the electrical transport properties of F-doped SnO2 thin films in a temperature range from 12 to 300 K. Two samples exhibit metallic characteristics in high temperature ranges, where the phonon-dominated scattering is the main conduction mechanism. In the low temperature range below 60 K, the negative magnetoresistivity resulting from the weak localization effect is observed. Applying weak-localization theory, we have obtained the inelastic scattering time. The obtained inelastic scattering time is proportional to T-3, indicating that the electron-phonon interaction is main dephasing mechanism for electrons.

AB - We study the electrical transport properties of F-doped SnO2 thin films in a temperature range from 12 to 300 K. Two samples exhibit metallic characteristics in high temperature ranges, where the phonon-dominated scattering is the main conduction mechanism. In the low temperature range below 60 K, the negative magnetoresistivity resulting from the weak localization effect is observed. Applying weak-localization theory, we have obtained the inelastic scattering time. The obtained inelastic scattering time is proportional to T-3, indicating that the electron-phonon interaction is main dephasing mechanism for electrons.

KW - A. F-doped SnO

KW - D. Electron dephasing mechanism

KW - D. Phonon-dominated scattering

KW - D. Weak localization effect

UR - https://www.scopus.com/pages/publications/84874143827

U2 - 10.1016/j.ssc.2012.12.024

DO - 10.1016/j.ssc.2012.12.024

M3 - 文章

AN - SCOPUS:84874143827

SN - 0038-1098

VL - 157

SP - 49

EP - 53

JO - Solid State Communications

JF - Solid State Communications

ER -

Low temperature electrical transport properties of F-doped SnO₂ films

Abstract

Keywords

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