Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

C. P. Jiang; Z. M. Huang; Z. F. Li; J. Yu; S. L. Guo; W. Lu; J. H. Chu; L. J. Cui; Z. P. Zeng; Z. P. Zhu; B. Q. Wang

doi:10.1063/1.1396818

Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

C. P. Jiang^*
, Z. M. Huang
, Z. F. Li
, J. Yu
, S. L. Guo
, W. Lu
, J. H. Chu
, L. J. Cui
, Z. P. Zeng
, Z. P. Zhu
, B. Q. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In_0.52Al_0.48As spacer thickness on longitudinal optic phonon-plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses.

Original language	English
Pages (from-to)	1375-1377
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	9
DOIs	https://doi.org/10.1063/1.1396818
State	Published - 27 Aug 2001
Externally published	Yes

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title = "Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates",

abstract = "InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon-plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses.",

author = "Jiang, \{C. P.\} and Huang, \{Z. M.\} and Li, \{Z. F.\} and J. Yu and Guo, \{S. L.\} and W. Lu and Chu, \{J. H.\} and Cui, \{L. J.\} and Zeng, \{Z. P.\} and Zhu, \{Z. P.\} and Wang, \{B. Q.\}",

year = "2001",

month = aug,

day = "27",

doi = "10.1063/1.1396818",

language = "英语",

volume = "79",

pages = "1375--1377",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

AU - Jiang, C. P.

AU - Huang, Z. M.

AU - Li, Z. F.

AU - Yu, J.

AU - Guo, S. L.

AU - Lu, W.

AU - Chu, J. H.

AU - Cui, L. J.

AU - Zeng, Z. P.

AU - Zhu, Z. P.

AU - Wang, B. Q.

PY - 2001/8/27

Y1 - 2001/8/27

N2 - InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon-plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses.

AB - InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon-plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses.

UR - https://www.scopus.com/pages/publications/18044401970

U2 - 10.1063/1.1396818

DO - 10.1063/1.1396818

M3 - 文章

AN - SCOPUS:18044401970

SN - 0003-6951

VL - 79

SP - 1375

EP - 1377

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

Abstract

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