Abstract
We demonstrate an on-chip photodetector by integrating a graphene and topological insulator Bi2Te3 heterostructure on a thin-film lithium niobate waveguide. Lithium niobate on insulator (LNOI) waveguides are fabricated by the photolithography-assisted chemical mechanical etching method. The bismuth telluride (Bi2Te3) and graphene heterostructure design provides enhanced photocurrent due to the effective photocarrier generation. The lithium niobate waveguide-integrated Bi2Te3/graphene heterojunction presents a high absorption coefficient of 2.1 dB/µm. The Bi2Te3/graphene heterojunction photodetector exhibits a responsivity of 2.54 mA/W without external bias at a 1.55 µm wavelength, which is enhancement of sevenfold as compared to the pure graphene-based photodetector. The photodetector has a 3 dB bandwidth of over 4.7 GHz. This work provides a potentially viable method for a self-powered, high responsivity, and fast response of the photodetector integrated with the LNOI photonic platform.
| Original language | English |
|---|---|
| Pages (from-to) | 5969-5972 |
| Number of pages | 4 |
| Journal | Optics Letters |
| Volume | 49 |
| Issue number | 20 |
| DOIs | |
| State | Published - 15 Oct 2024 |