Leakage current mechanisms of SrTiO3 thin films with MIS structures

Jian Hua Ma; Xiang Jian Meng; Tie Lin; Shi Jian Liu; Jing Lan Sun; Jun Hao Chu

doi:10.1080/10584580500414242

Leakage current mechanisms of SrTiO₃ thin films with MIS structures

Jian Hua Ma^*
, Xiang Jian Meng
, Tie Lin
, Shi Jian Liu
, Jing Lan Sun
, Jun Hao Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

SrTiO₃ (STO) thin films with (200) preferential orientation were deposited on p-Si(100) substrates at 700°C by RF magnetron sputtering technique. Their leakage current mechanisms with metal-insulator-semiconductor (MIS) structures were investigated. It was found that the leakage current mechanisms followed the space charge limited current (SCLC) under the low applied electric filed and the Poole-Frenkel emission under the high one. In addition, the resistivity was higher than 10¹¹ Ω · until the voltage up to 10 V (corresponding to the electric field of 1.54 × 10³ kV/cm), indicating that the STO films have good insulation properties.

Original language	English
Pages (from-to)	189-197
Number of pages	9
Journal	Integrated Ferroelectrics
Volume	74
DOIs	https://doi.org/10.1080/10584580500414242
State	Published - 2005
Externally published	Yes
Event	Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 - Shanghai, China Duration: 17 Apr 2005 → 20 Apr 2005

Keywords

Leakage current
RF magnetron sputtering
SrTiO thin films

Access to Document

10.1080/10584580500414242

Cite this

@article{de32f037d8a34210bec23110c8a3731e,

title = "Leakage current mechanisms of SrTiO3 thin films with MIS structures",

abstract = "SrTiO3 (STO) thin films with (200) preferential orientation were deposited on p-Si(100) substrates at 700°C by RF magnetron sputtering technique. Their leakage current mechanisms with metal-insulator-semiconductor (MIS) structures were investigated. It was found that the leakage current mechanisms followed the space charge limited current (SCLC) under the low applied electric filed and the Poole-Frenkel emission under the high one. In addition, the resistivity was higher than 1011 Ω · until the voltage up to 10 V (corresponding to the electric field of 1.54 × 103 kV/cm), indicating that the STO films have good insulation properties.",

keywords = "Leakage current, RF magnetron sputtering, SrTiO thin films",

author = "Ma, \{Jian Hua\} and Meng, \{Xiang Jian\} and Tie Lin and Liu, \{Shi Jian\} and Sun, \{Jing Lan\} and Chu, \{Jun Hao\}",

year = "2005",

doi = "10.1080/10584580500414242",

language = "英语",

volume = "74",

pages = "189--197",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

note = "Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 ; Conference date: 17-04-2005 Through 20-04-2005",

}

TY - JOUR

T1 - Leakage current mechanisms of SrTiO3 thin films with MIS structures

AU - Ma, Jian Hua

AU - Meng, Xiang Jian

AU - Lin, Tie

AU - Liu, Shi Jian

AU - Sun, Jing Lan

AU - Chu, Jun Hao

PY - 2005

Y1 - 2005

N2 - SrTiO3 (STO) thin films with (200) preferential orientation were deposited on p-Si(100) substrates at 700°C by RF magnetron sputtering technique. Their leakage current mechanisms with metal-insulator-semiconductor (MIS) structures were investigated. It was found that the leakage current mechanisms followed the space charge limited current (SCLC) under the low applied electric filed and the Poole-Frenkel emission under the high one. In addition, the resistivity was higher than 1011 Ω · until the voltage up to 10 V (corresponding to the electric field of 1.54 × 103 kV/cm), indicating that the STO films have good insulation properties.

AB - SrTiO3 (STO) thin films with (200) preferential orientation were deposited on p-Si(100) substrates at 700°C by RF magnetron sputtering technique. Their leakage current mechanisms with metal-insulator-semiconductor (MIS) structures were investigated. It was found that the leakage current mechanisms followed the space charge limited current (SCLC) under the low applied electric filed and the Poole-Frenkel emission under the high one. In addition, the resistivity was higher than 1011 Ω · until the voltage up to 10 V (corresponding to the electric field of 1.54 × 103 kV/cm), indicating that the STO films have good insulation properties.

KW - Leakage current

KW - RF magnetron sputtering

KW - SrTiO thin films

UR - https://www.scopus.com/pages/publications/33645506371

U2 - 10.1080/10584580500414242

DO - 10.1080/10584580500414242

M3 - 会议文章

AN - SCOPUS:33645506371

SN - 1058-4587

VL - 74

SP - 189

EP - 197

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

T2 - Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17

Y2 - 17 April 2005 through 20 April 2005

ER -

Leakage current mechanisms of SrTiO₃ thin films with MIS structures

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this