Abstract
Tin-lead perovskite solar cells (Sn-Pb PSCs) with low band gap (1.2–1.4 eV) are expected to achieve the maximum-power conversion efficiency (PCE) of single-junction devices given by the Shockley-Queisser limit. However, over 40 mol % Pb2+ is necessary to suppress the oxidation of Sn2+, which causes serious p-type self-doping. Here, we propose a new galvanic displacement reaction (GDR) method, through using lead powder as lead source and reductant simultaneously to resolve the above-mentioned issue. Lead powder could fully reduce Sn4+, but not Sn2+, in precursor, meanwhile suppressing the formation of iodide in film. Finally, Sn-Pb PSCs with low lead content and highest efficiency for MA-free-based devices (PCE: 18.34% for 8.5 mol % Pb2+, 20.01% for 18.7 mol % Pb2+) were realized. The unencapsulated devices retained unchanged or 81% of the original efficiency after storing for 2,352 h or tracking at maximum-power point (MPP) for 700 h in N2 atmosphere (O2 ≤ 50 ppm).
| Original language | English |
|---|---|
| Pages (from-to) | 2904-2914 |
| Number of pages | 11 |
| Journal | Joule |
| Volume | 5 |
| Issue number | 11 |
| DOIs | |
| State | Published - 17 Nov 2021 |
| Externally published | Yes |
Keywords
- MA-free-based devices
- galvanic displacement reaction method
- low lead content
- tin-lead perovskite solar cells
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