Lattice expansion and evolution of damage buildup in Be-implanted InAs

Q. W. Wang; C. H. Sun; M. Chen; S. H. Hu; J. Wu; Y. Sun; G. J. Hu; X. Chen; H. Y. Deng; N. Dai

doi:10.1016/j.nimb.2011.07.099

Lattice expansion and evolution of damage buildup in Be-implanted InAs

Q. W. Wang
, C. H. Sun
, M. Chen
, S. H. Hu
, J. Wu
, Y. Sun
, G. J. Hu
, X. Chen
, H. Y. Deng^*
, N. Dai

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics
Shandong University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The lattice expansion in InAs single crystal, due to ion-implantation by 80 keV Be ions with the implantation fluencies ranging from 1 × 10 ¹² to 2 × 10¹⁶ cm^-2, has been investigated by using high resolution X-ray diffraction (HRXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectrometry/channeling (RBS/C). In order to clarify the evolution of damage buildup, the nonlinear maximum perpendicular strain _m as a function of the Be fluence was obtained and analyzed. The curve of _m vs. Be fluence is subdivided into five regions, each having a different damage accumulation behavior. The involved probable mechanisms of microstructural variation in InAs due to Be implantation of different fluencies are analyzed in detail.

Original language	English
Pages (from-to)	2527-2531
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	269
Issue number	21
DOIs	https://doi.org/10.1016/j.nimb.2011.07.099
State	Published - 1 Nov 2011
Externally published	Yes

Keywords

HRXRD
III-V Semiconductors
Indium arsenide
Ion-implantation
Microstructure

Access to Document

10.1016/j.nimb.2011.07.099

Cite this

@article{101a16f9058a477385f789c6a39ecb7d,

title = "Lattice expansion and evolution of damage buildup in Be-implanted InAs",

abstract = "The lattice expansion in InAs single crystal, due to ion-implantation by 80 keV Be ions with the implantation fluencies ranging from 1 × 10 12 to 2 × 1016 cm-2, has been investigated by using high resolution X-ray diffraction (HRXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectrometry/channeling (RBS/C). In order to clarify the evolution of damage buildup, the nonlinear maximum perpendicular strain m as a function of the Be fluence was obtained and analyzed. The curve of m vs. Be fluence is subdivided into five regions, each having a different damage accumulation behavior. The involved probable mechanisms of microstructural variation in InAs due to Be implantation of different fluencies are analyzed in detail.",

keywords = "HRXRD, III-V Semiconductors, Indium arsenide, Ion-implantation, Microstructure",

author = "Wang, \{Q. W.\} and Sun, \{C. H.\} and M. Chen and Hu, \{S. H.\} and J. Wu and Y. Sun and Hu, \{G. J.\} and X. Chen and Deng, \{H. Y.\} and N. Dai",

year = "2011",

month = nov,

day = "1",

doi = "10.1016/j.nimb.2011.07.099",

language = "英语",

volume = "269",

pages = "2527--2531",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "21",

}

TY - JOUR

T1 - Lattice expansion and evolution of damage buildup in Be-implanted InAs

AU - Wang, Q. W.

AU - Sun, C. H.

AU - Chen, M.

AU - Hu, S. H.

AU - Wu, J.

AU - Sun, Y.

AU - Hu, G. J.

AU - Chen, X.

AU - Deng, H. Y.

AU - Dai, N.

PY - 2011/11/1

Y1 - 2011/11/1

N2 - The lattice expansion in InAs single crystal, due to ion-implantation by 80 keV Be ions with the implantation fluencies ranging from 1 × 10 12 to 2 × 1016 cm-2, has been investigated by using high resolution X-ray diffraction (HRXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectrometry/channeling (RBS/C). In order to clarify the evolution of damage buildup, the nonlinear maximum perpendicular strain m as a function of the Be fluence was obtained and analyzed. The curve of m vs. Be fluence is subdivided into five regions, each having a different damage accumulation behavior. The involved probable mechanisms of microstructural variation in InAs due to Be implantation of different fluencies are analyzed in detail.

AB - The lattice expansion in InAs single crystal, due to ion-implantation by 80 keV Be ions with the implantation fluencies ranging from 1 × 10 12 to 2 × 1016 cm-2, has been investigated by using high resolution X-ray diffraction (HRXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectrometry/channeling (RBS/C). In order to clarify the evolution of damage buildup, the nonlinear maximum perpendicular strain m as a function of the Be fluence was obtained and analyzed. The curve of m vs. Be fluence is subdivided into five regions, each having a different damage accumulation behavior. The involved probable mechanisms of microstructural variation in InAs due to Be implantation of different fluencies are analyzed in detail.

KW - HRXRD

KW - III-V Semiconductors

KW - Indium arsenide

KW - Ion-implantation

KW - Microstructure

UR - https://www.scopus.com/pages/publications/80052078813

U2 - 10.1016/j.nimb.2011.07.099

DO - 10.1016/j.nimb.2011.07.099

M3 - 文章

AN - SCOPUS:80052078813

SN - 0168-583X

VL - 269

SP - 2527

EP - 2531

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 21

ER -

Lattice expansion and evolution of damage buildup in Be-implanted InAs

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this