Large spin-orbit splitting in inversion layers on hgcdte with an inverted band structure

This paper reports the study of the magneto-transport properties of a two-dimensional electron gas confined in inversion layers on HgCdTe with an inverted band structure. The magnetoresistance exhibits Shubnikov-de Hass oscillations, where beating patterns are observed at low magnetic field. This can be attributed to the zero-field spin splitting. By using the fast Fourier transformation of the observed beating patterns, the zero-field spin splitting energy is extracted. The extracted energy up to ∼ 34meV is obtained, which is far larger than that in inversion layers on HgCdTe with a normal band structure. This offers a route to realize a HgTe-based spintronic device that works at room temperature.