TY - JOUR
T1 - Large enhancement of the thermoelectric Seebeck coefficient for amorphous oxide semiconductor superlattices with extremely thin conductive layers
AU - Ohta, Hiromichi
AU - Huang, Rong
AU - Ikuhara, Yuichi
PY - 2008
Y1 - 2008
N2 - Herein we demonstrate that amorphous oxide semiconductor (AOS) superlattices composed of a-In-Zn-O (well) and a-In-Ga-Zn-O (barrier) layers, fabricated on SiO2 glass substrate by pulsed laser deposition at room temperature, exhibited an enhanced Seebeck coefficient |S |. The |S | value increases drastically with decreasing a-In-Zn-O thickness (dIZO) when dIZO < ∼5 nm, and reached 73 uV K (dIZO = 0.3 nm), which is ∼4 times larger than that of bulk |S|3D(19 uV K '), while it kept its high electrical conductivity, clearly demonstrating that the quantum size effect can be utilized in AOS superlattices.
AB - Herein we demonstrate that amorphous oxide semiconductor (AOS) superlattices composed of a-In-Zn-O (well) and a-In-Ga-Zn-O (barrier) layers, fabricated on SiO2 glass substrate by pulsed laser deposition at room temperature, exhibited an enhanced Seebeck coefficient |S |. The |S | value increases drastically with decreasing a-In-Zn-O thickness (dIZO) when dIZO < ∼5 nm, and reached 73 uV K (dIZO = 0.3 nm), which is ∼4 times larger than that of bulk |S|3D(19 uV K '), while it kept its high electrical conductivity, clearly demonstrating that the quantum size effect can be utilized in AOS superlattices.
UR - https://www.scopus.com/pages/publications/70450187235
U2 - 10.1002/pssr.200802017
DO - 10.1002/pssr.200802017
M3 - 文章
AN - SCOPUS:70450187235
SN - 1862-6254
VL - 2
SP - 105
EP - 107
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 3
ER -