Large dielectric constant and Maxwell-Wagner relaxation in Bi 2/3Cu3Ti4O12

  • Jianjun Liu*
  • , Chun Gang Duan
  • , Wei Guo Yin
  • , W. N. Mei
  • , R. W. Smith
  • , J. R. Hardy
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

594 Scopus citations

Abstract

We studied frequency and temperature dependences of impedance, electric modulus, and dielectric permittivity of Bi2/3Cu3Ti 4O12 in the ranges of 10-1-106 Hz and -150-200°C, respectively. We first observed two electrical responses in the impedance and modulus formalisms. Then we detected a Debye-like relaxation in the permittivity formalism. Most interestingly, we found that the large dielectric constant of Bi2/3Cu3Ti4O 12 is independent of the temperature and frequency below 150°C. The results are interpreted in terms of a two-layer model with conducting grains partitioned from each other by poorly conducting grain boundaries. Using this model, we attributed the two electrical responses in impedance and modulus formalisms to the grain and grain-boundary effects, respectively, while the detected Debye-like relaxation and large dielectric constant were well explained in terms of Maxwell-Wagner relaxation.

Original languageEnglish
Article number144106
Pages (from-to)144106-1-144106-7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number14
DOIs
StatePublished - Oct 2004
Externally publishedYes

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