Large-Area Flexible Memory Arrays of Oriented Molecular Ferroelectric Single Crystals with Nearly Saturated Polarization

  • Mingsheng Xu
  • , Chenxu Sheng
  • , Qiuyi Zhang
  • , Xiaojie Zhou
  • , Bobo Tian
  • , Luqiu Chen
  • , Yichen Cai
  • , Jianping Li
  • , Jiao Wang
  • , Yongfa Xie*
  • , Xinxia Qiu
  • , Wenchong Wang
  • , Shisheng Xiong
  • , Chunxiao Cong
  • , Zhi Jun Qiu
  • , Ran Liu
  • , Laigui Hu*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Molecular ferroelectrics (MFs) have been proven to demonstrate excellent properties even comparable to those of inorganic counterparts usually with heavy metals. However, the validation of their device applications is still at the infant stage. The polycrystalline feature of conventionally obtained MF films, the patterning challenges for microelectronics and the brittleness of crystalline films significantly hinder their development for organic integrated circuits, as well as emerging flexible electronics. Here, a large-area flexible memory array is demonstrated of oriented molecular ferroelectric single crystals (MFSCs) with nearly saturated polarization. Highly-uniform MFSC arrays are prepared on large-scale substrates including Si wafers and flexible substrates using an asymmetric-wetting and microgroove-assisted coating (AWMAC) strategy. Resultant flexible memory arrays exhibit excellent nonvolatile memory properties with a low-operating voltage of <5 V, i.e., nearly saturated ferroelectric polarization (6.5 µC cm−2), and long bending endurance (>103) under various bending radii. These results may open an avenue for scalable flexible MF electronics with high performance.

Original languageEnglish
Article number2203882
JournalSmall
Volume18
Issue number45
DOIs
StatePublished - 10 Nov 2022

Keywords

  • flexible nonvolatile memories
  • molecular ferroelectrics
  • saturated polarization
  • single-crystalline arrays
  • wafer-scale patterning

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