Investigation of total dose effects in SiGe HBTs under different exposure conditions

Yabin Sun; Ziyu Liu; Jun Fu; Xiaojin Li; Yanling Shi

doi:10.1016/j.radphyschem.2018.05.019

Investigation of total dose effects in SiGe HBTs under different exposure conditions

Yabin Sun, Ziyu Liu, Jun Fu, Xiaojin Li, Yanling Shi

School of Communication and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

This paper presents the total dose effects of gamma ray and swift heavy ion irradiation on silicon-germanium heterojunction bipolar transistors (SiGe HBTs). The direct current (DC) characteristics, such as forward-Gummel, reverse-Gummel and current ideality factors before and after irradiation are analyzed and used to quantify the dose tolerance. Experiment results show that the performance degradation depends on the dose rate and bias condition during gamma ray irradiation. Compared to gamma ray irradiation, more serious base current degradation exists in the transistors exposed to 25 MeV Si ion. The base current in forward- and reverse-Gummel mode are found to show a distinct sensitivity to gamma ray and swift heavy ion irradiation. An increase in emitter current appears in the reverse-Gummel test after heavy ion irradiation. The underlying physical mechanisms are analyzed and investigated in detail.

Original language	English
Pages (from-to)	84-89
Number of pages	6
Journal	Radiation Physics and Chemistry
Volume	151
DOIs	https://doi.org/10.1016/j.radphyschem.2018.05.019
State	Published - Oct 2018

Keywords

Displacement damage
Ionization damage
SiGe HBT
Total dose effects

Access to Document

10.1016/j.radphyschem.2018.05.019

Cite this

@article{0391aae1d9e64c9a9d51581d60dc303f,

title = "Investigation of total dose effects in SiGe HBTs under different exposure conditions",

abstract = "This paper presents the total dose effects of gamma ray and swift heavy ion irradiation on silicon-germanium heterojunction bipolar transistors (SiGe HBTs). The direct current (DC) characteristics, such as forward-Gummel, reverse-Gummel and current ideality factors before and after irradiation are analyzed and used to quantify the dose tolerance. Experiment results show that the performance degradation depends on the dose rate and bias condition during gamma ray irradiation. Compared to gamma ray irradiation, more serious base current degradation exists in the transistors exposed to 25 MeV Si ion. The base current in forward- and reverse-Gummel mode are found to show a distinct sensitivity to gamma ray and swift heavy ion irradiation. An increase in emitter current appears in the reverse-Gummel test after heavy ion irradiation. The underlying physical mechanisms are analyzed and investigated in detail.",

keywords = "Displacement damage, Ionization damage, SiGe HBT, Total dose effects",

author = "Yabin Sun and Ziyu Liu and Jun Fu and Xiaojin Li and Yanling Shi",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

month = oct,

doi = "10.1016/j.radphyschem.2018.05.019",

language = "英语",

volume = "151",

pages = "84--89",

journal = "Radiation Physics and Chemistry",

issn = "0969-806X",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Investigation of total dose effects in SiGe HBTs under different exposure conditions

AU - Sun, Yabin

AU - Liu, Ziyu

AU - Fu, Jun

AU - Li, Xiaojin

AU - Shi, Yanling

PY - 2018/10

Y1 - 2018/10

N2 - This paper presents the total dose effects of gamma ray and swift heavy ion irradiation on silicon-germanium heterojunction bipolar transistors (SiGe HBTs). The direct current (DC) characteristics, such as forward-Gummel, reverse-Gummel and current ideality factors before and after irradiation are analyzed and used to quantify the dose tolerance. Experiment results show that the performance degradation depends on the dose rate and bias condition during gamma ray irradiation. Compared to gamma ray irradiation, more serious base current degradation exists in the transistors exposed to 25 MeV Si ion. The base current in forward- and reverse-Gummel mode are found to show a distinct sensitivity to gamma ray and swift heavy ion irradiation. An increase in emitter current appears in the reverse-Gummel test after heavy ion irradiation. The underlying physical mechanisms are analyzed and investigated in detail.

AB - This paper presents the total dose effects of gamma ray and swift heavy ion irradiation on silicon-germanium heterojunction bipolar transistors (SiGe HBTs). The direct current (DC) characteristics, such as forward-Gummel, reverse-Gummel and current ideality factors before and after irradiation are analyzed and used to quantify the dose tolerance. Experiment results show that the performance degradation depends on the dose rate and bias condition during gamma ray irradiation. Compared to gamma ray irradiation, more serious base current degradation exists in the transistors exposed to 25 MeV Si ion. The base current in forward- and reverse-Gummel mode are found to show a distinct sensitivity to gamma ray and swift heavy ion irradiation. An increase in emitter current appears in the reverse-Gummel test after heavy ion irradiation. The underlying physical mechanisms are analyzed and investigated in detail.

KW - Displacement damage

KW - Ionization damage

KW - SiGe HBT

KW - Total dose effects

UR - https://www.scopus.com/pages/publications/85047793008

U2 - 10.1016/j.radphyschem.2018.05.019

DO - 10.1016/j.radphyschem.2018.05.019

M3 - 文章

AN - SCOPUS:85047793008

SN - 0969-806X

VL - 151

SP - 84

EP - 89

JO - Radiation Physics and Chemistry

JF - Radiation Physics and Chemistry

ER -

Investigation of total dose effects in SiGe HBTs under different exposure conditions

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this