Investigation of the relative density of deep defects in Cu(In,Ga)Se 2 thin films dependent on Ga content by transient photocapacitance method

Xiaobo Hu; Takeaki Sakurai; Akimasa Yamada; Shogo Ishizuka; Shigeru Niki; Katsuhiro Akimoto

doi:10.7567/JJAP.53.068008

Investigation of the relative density of deep defects in Cu(In,Ga)Se ₂ thin films dependent on Ga content by transient photocapacitance method

Xiaobo Hu, Takeaki Sakurai, Akimasa Yamada, Shogo Ishizuka, Shigeru Niki, Katsuhiro Akimoto

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The density of deep defects at 0.8 eV above the valence band in Cu(In,Ga)Se₂ (CIGS) thin films was investigated by a transient photocapacitance (TPC) method. A relatively quantitative comparison of deep defect densities showed that the defect density seems to increase with increasing Ga/III ratio. This could be one reason for the poor device performance of CIGS samples with high Ga content.

Original language	English
Article number	068008
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	53
Issue number	6
DOIs	https://doi.org/10.7567/JJAP.53.068008
State	Published - Jun 2014
Externally published	Yes

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Hu, X., Sakurai, T., Yamada, A., Ishizuka, S., Niki, S., & Akimoto, K. (2014). Investigation of the relative density of deep defects in Cu(In,Ga)Se ₂ thin films dependent on Ga content by transient photocapacitance method. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 53(6), Article 068008. https://doi.org/10.7567/JJAP.53.068008

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title = "Investigation of the relative density of deep defects in Cu(In,Ga)Se 2 thin films dependent on Ga content by transient photocapacitance method",

abstract = "The density of deep defects at 0.8 eV above the valence band in Cu(In,Ga)Se2 (CIGS) thin films was investigated by a transient photocapacitance (TPC) method. A relatively quantitative comparison of deep defect densities showed that the defect density seems to increase with increasing Ga/III ratio. This could be one reason for the poor device performance of CIGS samples with high Ga content.",

author = "Xiaobo Hu and Takeaki Sakurai and Akimasa Yamada and Shogo Ishizuka and Shigeru Niki and Katsuhiro Akimoto",

year = "2014",

month = jun,

doi = "10.7567/JJAP.53.068008",

language = "英语",

volume = "53",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Institute of Physics",

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Hu, X, Sakurai, T, Yamada, A, Ishizuka, S, Niki, S & Akimoto, K 2014, 'Investigation of the relative density of deep defects in Cu(In,Ga)Se ₂ thin films dependent on Ga content by transient photocapacitance method', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 53, no. 6, 068008. https://doi.org/10.7567/JJAP.53.068008

Investigation of the relative density of deep defects in Cu(In,Ga)Se ₂ thin films dependent on Ga content by transient photocapacitance method. / Hu, Xiaobo; Sakurai, Takeaki; Yamada, Akimasa et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 53, No. 6, 068008, 06.2014.

Research output: Contribution to journal › Article › peer-review

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T1 - Investigation of the relative density of deep defects in Cu(In,Ga)Se 2 thin films dependent on Ga content by transient photocapacitance method

AU - Hu, Xiaobo

AU - Sakurai, Takeaki

AU - Yamada, Akimasa

AU - Ishizuka, Shogo

AU - Niki, Shigeru

AU - Akimoto, Katsuhiro

PY - 2014/6

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AB - The density of deep defects at 0.8 eV above the valence band in Cu(In,Ga)Se2 (CIGS) thin films was investigated by a transient photocapacitance (TPC) method. A relatively quantitative comparison of deep defect densities showed that the defect density seems to increase with increasing Ga/III ratio. This could be one reason for the poor device performance of CIGS samples with high Ga content.

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M3 - 文章

AN - SCOPUS:84903141768

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Investigation of the relative density of deep defects in Cu(In,Ga)Se ₂ thin films dependent on Ga content by transient photocapacitance method

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