TY - JOUR
T1 - Investigation of the properties of deep-level defect in Cu(In,Ga)Se2 thin films by steady-state photocapacitance and time-resolved photoluminescence measurements
AU - Hu, Xiaobo
AU - Sakurai, Takeaki
AU - Yamada, Akimasa
AU - Ishizuka, Shogo
AU - Niki, Shigeru
AU - Akimoto, Katsuhiro
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/4/1
Y1 - 2015/4/1
N2 - The quantitative characterization of the deep-level defect located at around 0.8 eV above the valence band in Cu(In1-x,Gax)Se2 (CIGS) thin films was performed by steady-state photocapacitance (SSPC) and time-resolved photoluminescence (TRPL) measurements. The defect concentration, photoionization cross section and electron capture cross section were evaluated to be on the order of 1013-1014cm-3, 10-17-10-16cm2, and 10-14cm2, respectively, in the Ga content x range from 0.30 to 0.80; the first two values increased with increasing Ga content while the last one remained almost constant. By comparing the obtained values with the actual device performance, the cause of the degradation of the conversion efficiency of CIGS solar cells with higher Ga content was discussed in relation to the 0.8 eV defect.
AB - The quantitative characterization of the deep-level defect located at around 0.8 eV above the valence band in Cu(In1-x,Gax)Se2 (CIGS) thin films was performed by steady-state photocapacitance (SSPC) and time-resolved photoluminescence (TRPL) measurements. The defect concentration, photoionization cross section and electron capture cross section were evaluated to be on the order of 1013-1014cm-3, 10-17-10-16cm2, and 10-14cm2, respectively, in the Ga content x range from 0.30 to 0.80; the first two values increased with increasing Ga content while the last one remained almost constant. By comparing the obtained values with the actual device performance, the cause of the degradation of the conversion efficiency of CIGS solar cells with higher Ga content was discussed in relation to the 0.8 eV defect.
UR - https://www.scopus.com/pages/publications/84926291631
U2 - 10.7567/JJAP.54.04DR02
DO - 10.7567/JJAP.54.04DR02
M3 - 文章
AN - SCOPUS:84926291631
SN - 0021-4922
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 4
M1 - 04DR02
ER -