Investigation of Se supply for the growth of Cu                         2                         ZnSn(S                          x                         Se                         1-x                         )                         4                          (x ≈ 0.02-0.05) thin films for photovoltaics

Jie Ge; Shaohua Zuo; Jinchun Jiang; Jianhua Ma; Lihong Yang; Pingxiong Yang; Junhao Chu

doi:10.1016/j.apsusc.2012.04.080

Investigation of Se supply for the growth of Cu ₂ ZnSn(S _x Se _1-x ) ₄ (x ≈ 0.02-0.05) thin films for photovoltaics

Jie Ge
, Shaohua Zuo
, Jinchun Jiang^*
, Jianhua Ma
, Lihong Yang
, Pingxiong Yang
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

In this work, the selenization growth of electrochemically deposited Cu ₂ ZnSn(S _x Se _1-x ) ₄ (CZTSSe) films with x ≈ 0.02-0.05 was optimized by two groups of experiments in a graphite box. The selenization of CZTSSe is strongly dependent on the Se supply in the graphite box. Insufficient Se supply left the selenization incomplete. Higher Se supply to CZTSSe either by increasing the Se powder usage or by increasing the external pressure of nitrogen resulted in the degradation of CZTSSe films with lower degree of crystallinity. Our experimental results show that the refined usage amount of Se powder is 0.3 g and the optimized external pressure of flowing nitrogen in the furnace is from 0.5 Torr to 2 Torr. The characterization of XRD, Raman and SEM confirmed the films obtained under the best conditions were well-developed CZTSSe films with compact faceted grains and good crystallinity. Additionally, the CZTSSe film grown using 2 Torr of nitrogen pressure showed more orientation along (2 2 0/2 0 4).

Original language	English
Pages (from-to)	7844-7848
Number of pages	5
Journal	Applied Surface Science
Volume	258
Issue number	20
DOIs	https://doi.org/10.1016/j.apsusc.2012.04.080
State	Published - 1 Aug 2012

Keywords

Electroplating
ITO substrate
Se supply
Selenization
Solar cell absorber

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10.1016/j.apsusc.2012.04.080

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Ge, J., Zuo, S., Jiang, J., Ma, J., Yang, L., Yang, P., & Chu, J. (2012). Investigation of Se supply for the growth of Cu ₂ ZnSn(S _x Se _1-x ) ₄ (x ≈ 0.02-0.05) thin films for photovoltaics Applied Surface Science, 258(20), 7844-7848. https://doi.org/10.1016/j.apsusc.2012.04.080

Ge, Jie ; Zuo, Shaohua ; Jiang, Jinchun et al. / Investigation of Se supply for the growth of Cu ₂ ZnSn(S _x Se _1-x ) ₄ (x ≈ 0.02-0.05) thin films for photovoltaics In: Applied Surface Science. 2012 ; Vol. 258, No. 20. pp. 7844-7848.

@article{6d6d834412e544b6b9f94c8c6d583e51,

title = " Investigation of Se supply for the growth of Cu 2 ZnSn(S x Se 1-x ) 4 (x ≈ 0.02-0.05) thin films for photovoltaics ",

abstract = " In this work, the selenization growth of electrochemically deposited Cu 2 ZnSn(S x Se 1-x ) 4 (CZTSSe) films with x ≈ 0.02-0.05 was optimized by two groups of experiments in a graphite box. The selenization of CZTSSe is strongly dependent on the Se supply in the graphite box. Insufficient Se supply left the selenization incomplete. Higher Se supply to CZTSSe either by increasing the Se powder usage or by increasing the external pressure of nitrogen resulted in the degradation of CZTSSe films with lower degree of crystallinity. Our experimental results show that the refined usage amount of Se powder is 0.3 g and the optimized external pressure of flowing nitrogen in the furnace is from 0.5 Torr to 2 Torr. The characterization of XRD, Raman and SEM confirmed the films obtained under the best conditions were well-developed CZTSSe films with compact faceted grains and good crystallinity. Additionally, the CZTSSe film grown using 2 Torr of nitrogen pressure showed more orientation along (2 2 0/2 0 4).",

keywords = "Electroplating, ITO substrate, Se supply, Selenization, Solar cell absorber",

author = "Jie Ge and Shaohua Zuo and Jinchun Jiang and Jianhua Ma and Lihong Yang and Pingxiong Yang and Junhao Chu",

year = "2012",

month = aug,

day = "1",

doi = "10.1016/j.apsusc.2012.04.080",

language = "英语",

volume = "258",

pages = "7844--7848",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "20",

}

Ge, J, Zuo, S, Jiang, J, Ma, J, Yang, L, Yang, P & Chu, J 2012, ' Investigation of Se supply for the growth of Cu ₂ ZnSn(S _x Se _1-x ) ₄ (x ≈ 0.02-0.05) thin films for photovoltaics ', Applied Surface Science, vol. 258, no. 20, pp. 7844-7848. https://doi.org/10.1016/j.apsusc.2012.04.080

Investigation of Se supply for the growth of Cu ₂ ZnSn(S _x Se _1-x ) ₄ (x ≈ 0.02-0.05) thin films for photovoltaics . / Ge, Jie; Zuo, Shaohua; Jiang, Jinchun et al.
In: Applied Surface Science, Vol. 258, No. 20, 01.08.2012, p. 7844-7848.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Investigation of Se supply for the growth of Cu 2 ZnSn(S x Se 1-x ) 4 (x ≈ 0.02-0.05) thin films for photovoltaics

AU - Ge, Jie

AU - Zuo, Shaohua

AU - Jiang, Jinchun

AU - Ma, Jianhua

AU - Yang, Lihong

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2012/8/1

Y1 - 2012/8/1

N2 - In this work, the selenization growth of electrochemically deposited Cu 2 ZnSn(S x Se 1-x ) 4 (CZTSSe) films with x ≈ 0.02-0.05 was optimized by two groups of experiments in a graphite box. The selenization of CZTSSe is strongly dependent on the Se supply in the graphite box. Insufficient Se supply left the selenization incomplete. Higher Se supply to CZTSSe either by increasing the Se powder usage or by increasing the external pressure of nitrogen resulted in the degradation of CZTSSe films with lower degree of crystallinity. Our experimental results show that the refined usage amount of Se powder is 0.3 g and the optimized external pressure of flowing nitrogen in the furnace is from 0.5 Torr to 2 Torr. The characterization of XRD, Raman and SEM confirmed the films obtained under the best conditions were well-developed CZTSSe films with compact faceted grains and good crystallinity. Additionally, the CZTSSe film grown using 2 Torr of nitrogen pressure showed more orientation along (2 2 0/2 0 4).

AB - In this work, the selenization growth of electrochemically deposited Cu 2 ZnSn(S x Se 1-x ) 4 (CZTSSe) films with x ≈ 0.02-0.05 was optimized by two groups of experiments in a graphite box. The selenization of CZTSSe is strongly dependent on the Se supply in the graphite box. Insufficient Se supply left the selenization incomplete. Higher Se supply to CZTSSe either by increasing the Se powder usage or by increasing the external pressure of nitrogen resulted in the degradation of CZTSSe films with lower degree of crystallinity. Our experimental results show that the refined usage amount of Se powder is 0.3 g and the optimized external pressure of flowing nitrogen in the furnace is from 0.5 Torr to 2 Torr. The characterization of XRD, Raman and SEM confirmed the films obtained under the best conditions were well-developed CZTSSe films with compact faceted grains and good crystallinity. Additionally, the CZTSSe film grown using 2 Torr of nitrogen pressure showed more orientation along (2 2 0/2 0 4).

KW - Electroplating

KW - ITO substrate

KW - Se supply

KW - Selenization

KW - Solar cell absorber

UR - https://www.scopus.com/pages/publications/84862515027

U2 - 10.1016/j.apsusc.2012.04.080

DO - 10.1016/j.apsusc.2012.04.080

M3 - 文章

AN - SCOPUS:84862515027

SN - 0169-4332

VL - 258

SP - 7844

EP - 7848

JO - Applied Surface Science

JF - Applied Surface Science

IS - 20

ER -

Ge J, Zuo S, Jiang J, Ma J, Yang L, Yang P et al. Investigation of Se supply for the growth of Cu ₂ ZnSn(S _x Se _1-x ) ₄ (x ≈ 0.02-0.05) thin films for photovoltaics Applied Surface Science. 2012 Aug 1;258(20):7844-7848. doi: 10.1016/j.apsusc.2012.04.080

Investigation of Se supply for the growth of Cu ₂ ZnSn(S _x Se _1-x ) ₄ (x ≈ 0.02-0.05) thin films for photovoltaics

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