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Investigation of sb-rich Sb-Te binary films used as phase change material

  • Yan Cheng*
  • , Yifeng Gu
  • , Zhitang Song
  • , Sannian Song
  • , Feng Rao
  • , Liangcai Wu
  • , Bo Liu
  • , Songlin Feng
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Sb-rich Sb-Te films with different composition were investigated by temperature-dependent resistance measurement, crystal structure characterization, and in situ crystallization behavior study. The results show that when the Sb content is more than 80 at.%, Sb-rich Sb-Te films cannot be used as phase change material due to their low crystallization temperature and small resistance contrast. Sb-rich Sb-Te films with the Sb content being between 80∼67 at.% can be used as phase-change-material and they have similar properties because of their similar growth-dominant crystallization behaviors.

Original languageEnglish
Title of host publication2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage
DOIs
StatePublished - 2013
Externally publishedYes
Event2012 International Workshop on Information Storage, IWIS 2012 and 9th International Symposium on Optical Storage, ISOS 2012 - Shanghai, China
Duration: 21 Oct 201224 Oct 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8782
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference2012 International Workshop on Information Storage, IWIS 2012 and 9th International Symposium on Optical Storage, ISOS 2012
Country/TerritoryChina
CityShanghai
Period21/10/1224/10/12

Keywords

  • Crystal structure
  • Crystallization behavior
  • Phase change material
  • Sb-Te binary film
  • Sb-rich
  • TEM
  • Temperature-dependent resistance measurement
  • XRD

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