Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

Yabin Sun; Xianglong Li; Yue Zhuo; Yun Liu; Teng Wang; Xiaojin Li; Yanling Shi; Jun Xu; Ziyu Liu

doi:10.1088/1361-6641/abe01b

Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

Yabin Sun
, Xianglong Li
, Yue Zhuo
, Yun Liu
, Teng Wang
, Xiaojin Li
, Yanling Shi
, Jun Xu
, Ziyu Liu^*

^*Corresponding author for this work

School of Communication and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

An investigation into the intrinsic process variations including random dopant fluctuation (RDF), interface trap fluctuation, work-function variation (WFV) and oxide thickness variation was undertaken in a vertically stacked gate-all-around nanowire transistor. The fluctuation of the electrical characteristics induced by different sources of variation was discussed. The impact of process variations on static random access memory (SRAM) was also studied. On-state current I_ON could be affected by RDF in the source and drain region and the standard deviation can reach 17.2% of the median. WFV can cause obvious fluctuations in threshold voltage V_TH and consequently in the read static noise margin (RSNM) of SRAM. It has been discovered that the RSNM was deteriorated by 6.8% by WFV, which causes great uncertainty among all variation sources.

Original language	English
Article number	055009
Journal	Semiconductor Science and Technology
Volume	36
Issue number	5
DOIs	https://doi.org/10.1088/1361-6641/abe01b
State	Published - May 2021

Keywords

GAAFET
Interface trap fluctuation
Oxide thickness variation
Process fluctuation
Random dopant fluctuation
Work-function variation

Access to Document

10.1088/1361-6641/abe01b

Cite this

@article{6982b502e27d474f8d819a845533c8fc,

title = "Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit",

abstract = "An investigation into the intrinsic process variations including random dopant fluctuation (RDF), interface trap fluctuation, work-function variation (WFV) and oxide thickness variation was undertaken in a vertically stacked gate-all-around nanowire transistor. The fluctuation of the electrical characteristics induced by different sources of variation was discussed. The impact of process variations on static random access memory (SRAM) was also studied. On-state current ION could be affected by RDF in the source and drain region and the standard deviation can reach 17.2\% of the median. WFV can cause obvious fluctuations in threshold voltage VTH and consequently in the read static noise margin (RSNM) of SRAM. It has been discovered that the RSNM was deteriorated by 6.8\% by WFV, which causes great uncertainty among all variation sources.",

keywords = "GAAFET, Interface trap fluctuation, Oxide thickness variation, Process fluctuation, Random dopant fluctuation, Work-function variation",

author = "Yabin Sun and Xianglong Li and Yue Zhuo and Yun Liu and Teng Wang and Xiaojin Li and Yanling Shi and Jun Xu and Ziyu Liu",

year = "2021",

month = may,

doi = "10.1088/1361-6641/abe01b",

language = "英语",

volume = "36",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "5",

}

TY - JOUR

T1 - Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

AU - Sun, Yabin

AU - Li, Xianglong

AU - Zhuo, Yue

AU - Liu, Yun

AU - Wang, Teng

AU - Li, Xiaojin

AU - Shi, Yanling

AU - Xu, Jun

AU - Liu, Ziyu

PY - 2021/5

Y1 - 2021/5

N2 - An investigation into the intrinsic process variations including random dopant fluctuation (RDF), interface trap fluctuation, work-function variation (WFV) and oxide thickness variation was undertaken in a vertically stacked gate-all-around nanowire transistor. The fluctuation of the electrical characteristics induced by different sources of variation was discussed. The impact of process variations on static random access memory (SRAM) was also studied. On-state current ION could be affected by RDF in the source and drain region and the standard deviation can reach 17.2% of the median. WFV can cause obvious fluctuations in threshold voltage VTH and consequently in the read static noise margin (RSNM) of SRAM. It has been discovered that the RSNM was deteriorated by 6.8% by WFV, which causes great uncertainty among all variation sources.

AB - An investigation into the intrinsic process variations including random dopant fluctuation (RDF), interface trap fluctuation, work-function variation (WFV) and oxide thickness variation was undertaken in a vertically stacked gate-all-around nanowire transistor. The fluctuation of the electrical characteristics induced by different sources of variation was discussed. The impact of process variations on static random access memory (SRAM) was also studied. On-state current ION could be affected by RDF in the source and drain region and the standard deviation can reach 17.2% of the median. WFV can cause obvious fluctuations in threshold voltage VTH and consequently in the read static noise margin (RSNM) of SRAM. It has been discovered that the RSNM was deteriorated by 6.8% by WFV, which causes great uncertainty among all variation sources.

KW - GAAFET

KW - Interface trap fluctuation

KW - Oxide thickness variation

KW - Process fluctuation

KW - Random dopant fluctuation

KW - Work-function variation

UR - https://www.scopus.com/pages/publications/85105027143

U2 - 10.1088/1361-6641/abe01b

DO - 10.1088/1361-6641/abe01b

M3 - 文章

AN - SCOPUS:85105027143

SN - 0268-1242

VL - 36

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5

M1 - 055009

ER -

Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this